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71V65903S80BQG

256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80BQG

Package:165-TBGA;包裝:托盤 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 9MBIT PARALLEL 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V65903S80BQG8

256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80BQG8

Package:165-TBGA;包裝:托盤 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 9MBIT PARALLEL 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V65903S80PFG

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V65903S80PFGI

256Kx36,512Kx183.3VSynchronousZBT?SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V65903S80BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65903S80BGI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65903S80BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65903S80BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65903S80PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

IDT71V65903S80PFI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    71V65903S80BQG

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    SRAM

  • 技術(shù):

    SRAM - 同步,SDR(ZBT)

  • 存儲(chǔ)容量:

    9Mb(512K x 18)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 電壓 - 供電:

    3.135V ~ 3.465V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    165-TBGA

  • 供應(yīng)商器件封裝:

    165-CABGA(13x15)

  • 描述:

    IC SRAM 9MBIT PARALLEL 165CABGA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT, Integrated Device Technol
21+
64-LBGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營
詢價(jià)
IDT, Integrated Device Technol
24+
165-CABGA(13x15)
56200
一級(jí)代理/放心采購
詢價(jià)
IDT
1931+
N/A
1186
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
詢價(jià)
RENESAS(瑞薩)/IDT
2117+
CABGA-165(13x15)
315000
136個(gè)/托盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長
詢價(jià)
IDT
20+
BGA-165
136
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
IDT, Integrated Device Technol
21+
NA
11200
正品專賣,進(jìn)口原裝深圳現(xiàn)貨
詢價(jià)
Renesas
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價(jià)
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價(jià)
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
RENESAS(瑞薩)/IDT
23+
CABGA165(13x15)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
詢價(jià)
更多71V65903S80BQG供應(yīng)商 更新時(shí)間2025-1-18 13:02:00