首頁 >71V67603S133BGG>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
71V67603S133BGG | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
71V67603S133BGG | 包裝：托盤 封裝/外殼：119-BGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 9MBIT PARALLEL 119PBGA | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
包裝：卷帶（TR） 封裝/外殼：119-BGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 9MBIT PARALLEL 119PBGA | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
包裝：卷帶（TR） 封裝/外殼：119-BGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 9MBIT PARALLEL 119PBGA | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT |
產(chǎn)品屬性
- 產(chǎn)品編號：
71V67603S133BGG
- 制造商：
Renesas Electronics America Inc
- 類別：
集成電路（IC） > 存儲器
- 包裝：
托盤
- 存儲器類型：
易失
- 存儲器格式：
SRAM
- 技術(shù)：
SRAM - 同步，SDR
- 存儲容量：
9Mb（256K x 36）
- 存儲器接口：
并聯(lián)
- 電壓 - 供電：
3.135V ~ 3.465V
- 工作溫度：
0°C ~ 70°C（TA）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
119-BGA
- 供應(yīng)商器件封裝：
119-PBGA（14x22）
- 描述：
IC SRAM 9MBIT PARALLEL 119PBGA
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IDT, Integrated Device Technol |
21+ |
80-LBGA |
5280 |
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
IDT, Integrated Device Technol |
21+ |
119-PBGA(14x22) |
56200 |
一級代理/放心采購 |
詢價 | ||
RENESAS(瑞薩)/IDT |
1921+ |
PBGA-119(14x22) |
3575 |
向鴻倉庫現(xiàn)貨,優(yōu)勢絕對的原裝! |
詢價 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價 | ||
RENESAS(瑞薩)/IDT |
2117+ |
PBGA-119(14x22) |
315000 |
84個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長 |
詢價 | ||
IDT |
20+ |
BGA-119 |
84 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價 | ||
RENESAS(瑞薩)/IDT |
2021+ |
PBGA-119(14x22) |
499 |
詢價 | |||
RENESAS(瑞薩電子) |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
Integrated Device Technology |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價 |
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