首頁 >71V67603S133BGI>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
71V67603S133BGI | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
71V67603S133BGI | 包裝:卷帶(TR) 封裝/外殼:119-BGA 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 9MBIT PARALLEL 119PBGA | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
包裝:卷帶(TR) 封裝/外殼:119-BGA 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 9MBIT PARALLEL 119PBGA | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
71V67603S133BGI
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
卷帶(TR)
- 存儲(chǔ)器類型:
易失
- 存儲(chǔ)器格式:
SRAM
- 技術(shù):
SRAM - 同步,SDR
- 存儲(chǔ)容量:
9Mb(256K x 36)
- 存儲(chǔ)器接口:
并聯(lián)
- 電壓 - 供電:
3.135V ~ 3.465V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
119-BGA
- 供應(yīng)商器件封裝:
119-PBGA(14x22)
- 描述:
IC SRAM 9MBIT PARALLEL 119PBGA
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
RENESAS(瑞薩)/IDT |
2022+原裝正品 |
PBGA-119(14x22) |
18000 |
支持工廠BOM表配單 公司只做原裝正品貨 |
詢價(jià) | ||
IDT, Integrated Device Technol |
21+ |
90-LFBGA |
5280 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營 |
詢價(jià) | ||
IDT, Integrated Device Technol |
24+ |
119-PBGA(14x22) |
56200 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
RENESAS(瑞薩)/IDT |
1921+ |
PBGA-119(14x22) |
3575 |
向鴻倉庫現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝! |
詢價(jià) | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
RENESAS(瑞薩)/IDT |
2117+ |
PBGA-119(14x22) |
315000 |
84個(gè)/托盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng) |
詢價(jià) | ||
IDT |
20+ |
BGA-119 |
84 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Renesas |
21+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價(jià) | |||
RENESAS(瑞薩)/IDT |
2021+ |
PBGA-119(14x22) |
499 |
詢價(jià) | |||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) |
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