首頁 >IDT71V67603S133BQG>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IDT71V67603S133BQG

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S133BQGI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

71V67603S133BG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BGG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BGGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BQ

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BQG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BQGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BQI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V67603S133BGG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S133BGGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S133PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S133PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

詳細參數(shù)

  • 型號:

    IDT71V67603S133BQG

  • 功能描述:

    IC SRAM 9MBIT 133MHZ 165FBGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲器

  • 系列:

    -

  • 標準包裝:

    72

  • 系列:

    - 格式 -

  • 存儲器:

    RAM

  • 存儲器類型:

    SRAM - 同步

  • 存儲容量:

    9M(256K x 36)

  • 速度:

    75ns

  • 接口:

    并聯(lián)

  • 電源電壓:

    3.135 V ~ 3.465 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    100-LQFP

  • 供應商設備封裝:

    100-TQFP(14x14)

  • 包裝:

    托盤

  • 其它名稱:

    71V67703S75PFGI

供應商型號品牌批號封裝庫存備注價格
IDT
23+
165-CABGA(13x15)
73390
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IDT
22+
165CABGA (13x15)
9000
原廠渠道,現(xiàn)貨配單
詢價
IDT
21+
165CABGA (13x15)
13880
公司只售原裝,支持實單
詢價
IDT
23+
165CABGA (13x15)
9000
原裝正品,支持實單
詢價
IDT
23+
BGA
20000
原廠原裝正品現(xiàn)貨
詢價
IDT
2023+
BGA
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
IDT
22+
BGA
50000
只做原裝正品,假一罰十,歡迎咨詢
詢價
IDT
1116+
BGA
36
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
IDT
23+
BGA
5000
專注配單,只做原裝進口現(xiàn)貨
詢價
更多IDT71V67603S133BQG供應商 更新時間2025-1-8 16:30:00