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IDT71V67603S133BQGI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

71V67603S133BG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BGG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BGGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BQ

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BQG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BQGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133BQI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67603S133PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V67603S133BGG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S133BGGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S133BQG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S133PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67603S133PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    IDT71V67603S133BQGI

  • 功能描述:

    IC SRAM 9MBIT 133MHZ 165FBGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲(chǔ)器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    72

  • 系列:

    - 格式 -

  • 存儲(chǔ)器:

    RAM

  • 存儲(chǔ)器類型:

    SRAM - 同步

  • 存儲(chǔ)容量:

    9M(256K x 36)

  • 速度:

    75ns

  • 接口:

    并聯(lián)

  • 電源電壓:

    3.135 V ~ 3.465 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    100-LQFP

  • 供應(yīng)商設(shè)備封裝:

    100-TQFP(14x14)

  • 包裝:

    托盤

  • 其它名稱:

    71V67703S75PFGI

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT
23+
BGA
35680
只做進(jìn)口原裝QQ:373621633
詢價(jià)
IDT
23+
165-CABGA(13x15)
209250
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IDT
23+
BGA
20000
原廠原裝正品現(xiàn)貨
詢價(jià)
IDT
2023+
BGA
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
IDT
22+
165CABGA (13x15)
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IDT
21+
165CABGA (13x15)
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IDT
23+
165CABGA (13x15)
9000
原裝正品,支持實(shí)單
詢價(jià)
IDT
22+
BGA
50000
只做原裝正品,假一罰十,歡迎咨詢
詢價(jià)
IDT
1116+
BGA
36
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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更多IDT71V67603S133BQGI供應(yīng)商 更新時(shí)間2024-11-7 10:30:00