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71V67703S85BQG

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67703S85BQG

包裝:托盤 封裝/外殼:165-TBGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 9MBIT PARALLEL 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V67703S85BQG8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67703S85BQGI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67703S85BQGI8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67703S85BQGI

包裝:卷帶(TR) 封裝/外殼:165-TBGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 9MBIT PARALLEL 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V67703S85BQGI8

包裝:卷帶(TR) 封裝/外殼:165-TBGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 9MBIT PARALLEL 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V67703S85BQI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67703S85PFG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V67703S85PFGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V67703S85BG

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67703S85BGI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67703S85BQ

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67703S85BQI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67703S85PF

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V67703S85PFI

256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號:

    71V67703S85BQG

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術(shù):

    SRAM - 同步,SDR

  • 存儲容量:

    9Mb(256K x 36)

  • 存儲器接口:

    并聯(lián)

  • 電壓 - 供電:

    3.135V ~ 3.465V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    165-TBGA

  • 供應(yīng)商器件封裝:

    165-CABGA(13x15)

  • 描述:

    IC SRAM 9MBIT PARALLEL 165CABGA

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT, Integrated Device Technol
21+
90-TFBGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
詢價
IDT, Integrated Device Technol
21+
165-CABGA(13x15)
56200
一級代理/放心采購
詢價
IDT
1931+
N/A
1186
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
詢價
IDT
20+
BGA-165
136
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價
IDT, Integrated Device Technol
21+
NA
11200
正品專賣,進(jìn)口原裝深圳現(xiàn)貨
詢價
IDT,
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
Integrated Device Technology
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價
Renesas Electronics Corporatio
23+/24+
165-TBGA
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
詢價
更多71V67703S85BQG供應(yīng)商 更新時間2024-12-23 13:45:00