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CEB75N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,87A,RDS(ON)=12mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB75N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,87A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB75N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,75A,RDS(ON)=13mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB75N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,75A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP75N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,87A,RDS(ON)=12mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP75N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,87A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP75N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,75A,RDS(ON)=13mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP75N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,75A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP75N06G

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CJU75N06

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CJU75N06

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

FIR75N06PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FTK75N06D

60V/75AN-ChannelPowerMOSFET

FS

First Silicon Co., Ltd

HM75N06

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM75N06K

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

M75N06HD

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB75N06

TMOSPOWERFET75AMPERES60VOLTS

N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.Thisadvance

Motorola

Motorola, Inc

MTB75N06HD

TMOSPOWERFET75AMPERES60VOLTS

N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.Thisadvance

Motorola

Motorola, Inc

MTB75N06HD

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP75N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號:

    75N06L

  • 制造商:

    ON Semiconductor

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Rongtai(容泰半導(dǎo)體)
1年內(nèi)
TO-220C
2074
容泰經(jīng)銷商 共奕芯城一站式電子元器采購平臺支持自助
詢價(jià)
SANYO
2023+
TO-220
8700
原裝現(xiàn)貨
詢價(jià)
23+
27000
正品原裝貨價(jià)格低qq:2987726803
詢價(jià)
ZX
2023+
TO220F
58000
進(jìn)口原裝,現(xiàn)貨熱賣
詢價(jià)
VISHAY
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
詢價(jià)
RUICHIPS
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
RUHIPS
23+
NA/
447
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
VISHAY
23+
TO-220
3000
全新原裝
詢價(jià)
臺灣輝能微
23+
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
INFINEON/英飛凌
23+
TO-247
10000
公司只做原裝正品
詢價(jià)
更多75N06L供應(yīng)商 更新時(shí)間2024-11-18 10:01:00