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7N6

N-Channel Power MOSFET

DESCRIPTION TheNell7N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof7A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof600V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplications.suchasswitchedmodepowersu

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

7N6

650V N-Channel MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

7N6

HiPerFAST IGBT

Features ?Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB ?MediumfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?Uninterruptiblepowersupplies(UPS) ?

IXYS

IXYS Corporation

7N6

N-CHANNEL ENHANCEMENT MODE MOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

7N6

N-CHANNEL POWER MOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

7N6

N-CHANNEL ENHANCEMENT MODE

UTCUnisonic Technologies

友順友順科技股份有限公司

7N6

N-CHANNEL POWER MOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

7N6

N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS

UTCUnisonic Technologies

友順友順科技股份有限公司

7N6

7A, 600V N-CHANNEL POWER MOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

7N60

N-Channel Power MOSFET

DESCRIPTION TheNell7N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof7A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof600V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplications.suchasswitchedmodepowersu

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

7N60

600V N-Channel Power MOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一電子山東迪一電子科技有限公司

7N60

N-CHANNEL POWER MOSFET

■DESCRIPTION 7N607N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswitch

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

7N60

7A mps,600 Volts N-CHANNEL MOSFET

FEATURE ●7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

7N60

7.4 Amps, 600 Volts N-CHANNEL MOSFET

■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友順友順科技股份有限公司

7N60

isc N-Channel Mosfet Transistor

?DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. ?FEATURES ?DrainCurrent–ID=7A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirem

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

7N60

7 Amps竊?00Volts N-Channel MOSFET

■Description TheET7N60N-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. ■Features ●RDS(ON)=1.20?@VGS=10V ●Lowgatecha

ESTEKEstek Electronics Co. Ltd

伊泰克電子北京伊泰克電子有限公司

7N60

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友順友順科技股份有限公司

7N60_10

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友順友順科技股份有限公司

7N60A

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION TheUTC7N60AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsandisdesignedtohaveminimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsu

UTCUnisonic Technologies

友順友順科技股份有限公司

7N60A4

600V, SMPS Series N-Channel IGBT

TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    7N6

  • 制造商：

    ISC

  • 制造商全稱：

    Inchange Semiconductor Company Limited

  • 功能描述：

    N-Channel Mosfet Transistor

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11539
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2020+
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更多7N6供應(yīng)商 更新時(shí)間2025-1-13 16:30:00

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