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7N60A4

600V, SMPS Series N-Channel IGBT

TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower

Intersil

Intersil Corporation

7N60AL-X-TA3-T

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION TheUTC7N60AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsandisdesignedtohaveminimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsu

UTCUnisonic Technologies

友順友順科技股份有限公司

7N60AL-X-TF3-T

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION TheUTC7N60AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsandisdesignedtohaveminimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsu

UTCUnisonic Technologies

友順友順科技股份有限公司

7N60A-X-TA3-T

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION TheUTC7N60AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsandisdesignedtohaveminimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsu

UTCUnisonic Technologies

友順友順科技股份有限公司

7N60A-X-TF3-T

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION TheUTC7N60AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsandisdesignedtohaveminimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsu

UTCUnisonic Technologies

友順友順科技股份有限公司

7N60B

7A mps,600 Volts N-CHANNEL MOSFET

FEATURE ●7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

7N60C

HiPerFAST IGBT Lightspeed Series

Features ?Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?Uninterruptiblepowersupplies(UPS) ?Switc

IXYS

IXYS Corporation

7N60F

7A mps,600 Volts N-CHANNEL MOSFET

FEATURE ●7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

7N60G-X-T2Q-T

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友順友順科技股份有限公司

7N60G-X-TA3-T

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友順友順科技股份有限公司

詳細(xì)參數(shù)

  • 型號：

    7N6

  • 制造商：

    ISC

  • 制造商全稱：

    Inchange Semiconductor Company Limited

  • 功能描述：

    N-Channel Mosfet Transistor

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更多7N6供應(yīng)商 更新時(shí)間2025-4-21 16:30:00

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