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SVF7N65RMJ

Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
KODENSHIAUK
24+
TO-220F
50000
絕對(duì)原廠原裝,長期優(yōu)勢(shì)可定貨
 詢價(jià)
平偉
23+
TO-220TF
5000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋齑?詳
 詢價(jià)
平偉
22+
TO-220TF
50000
原裝正品.假一罰十
 詢價(jià)
平偉
2023+
8700
原裝現(xiàn)貨
 詢價(jià)
VBsemi
22+
TO220
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
 詢價(jià)
VBsemi
21+
TO220
10065
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
VBsemi
2204+
TO220
2452
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
VBsemi
24+
TO220
9000
只做原裝正品 有掛有貨 假一賠十
 詢價(jià)
VBsemi
23+
TO220
10000
原裝正品現(xiàn)貨
 詢價(jià)
VBsemi
23+
TO220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多7N65RMJ供應(yīng)商 更新時(shí)間2025-1-19 8:30:00

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