74404052075

Marking：7R5；WE-LQS SMT Semi-Shielded Power Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

74488540070

Marking：7R0；WE-EHPI Energy Harvesting Coupled Inductor

GeneralProperties: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

AD5112BCPZ80-500R7

Marking：7R；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ?Nominalresistortoleranceerror:±8%maximum ?Wipercurrent:±6mA ?Rheostatmodetemperaturecoefficient:35ppm/°C ?Lowpowerconsumption:2.5μAmax@2.7Vand125°C ?Widebandwidth:4MHz(5kΩoption) ?Power-onEEPROMrefreshtime

AD5112BCPZ80-RL7

Marking：7R；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ?Nominalresistortoleranceerror:±8%maximum ?Wipercurrent:±6mA ?Rheostatmodetemperaturecoefficient:35ppm/°C ?Lowpowerconsumption:2.5μAmax@2.7Vand125°C ?Widebandwidth:4MHz(5kΩoption) ?Power-onEEPROMrefreshtime

BZX8850S-C22

Marking：7R；Package：SOD882BD；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Totalpowerdissipation:≤365mW ?Toleranceseries:approximately±5 ?Workin

BZX8850S-C22-Q

Marking：7R；Package：DFN1006BD-2；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Totalpowerdissipation:≤365mW ?Toleranceseries:approximately±5 ?Workin

FR107WS

Marking：7R；Package：SOD-323；Surface Mount Fast Recovery Rectifiers

GAN7R0-150LBE

Marking：7R0ELBE；Package：SOT8073-1；150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package

1.Generaldescription TheGAN7R0-150LBEisageneralpurpose150V,7mΩGalliumNitride(GaN)FETinaLandGrid Array(LGA)package.Itisanormally-offe-modedeviceofferingsuperiorperformance. 2.Featuresandbenefits ?Enhancementmode-normally-offpowerswitch ?Ultrahighfreque

MM3Z6V2B

Marking：7R；Package：SC-76；Silicon Planar zener diodes

PDTD113ET

Marking：7R；Package：SOT23；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

RT6160AWSC

Marking：7R；Package：WL-CSP-15B；Low Quiescent, High Efficiency 3A Buck-Boost Converter with I2C Interface

GeneralDescription TheRT6160Aisahigh-efficiency,singleinductor,AdvancedConstantOn-Time(ACOT?)monolithicsynchronousBuck-Boostconverterthatcandeliverupto3Aoutputcurrentfrom2.2Vto5.5Vandwellregulatetothedigitallyprogrammableoutputvoltagefrom2.025Vto5.2V,which

SDIA4030-7R5M

Marking：7R5；SLIM INDUCTOR-RoHS

SMZ2539

Marking：7R；Package：SOD-123FL；SURFACE MOUNT SILICON ZENER DIODES

TCK22973G

Marking：7R；Package：WCSP6E；2A, 25mΩ Load Switch IC with Slew Rate Control Driver

TheTCK2292xGandTCK2297xGareloadswitchICsforpowermanagementwithslewratecontroldriverfeaturingwideinput voltageoperationfrom1.1to5.5V.SwitchONresistanceisonly25mΩ typicalat5.0V,-0.5Aloadconditionandthesefeatureaslewratecontrol driver.TCK2292xGhasout

TPRH10D40-7R0

Marking：7R0；SMD POWER INDUCTOR-RoHS

TPRH6D38-7R4

Marking：7R4；SMD POWER INDUCTOR-RoHS

TPRH8D28-7R3

Marking：7R3；SMD POWER INDUCTOR-RoHS