PHDMI2F4

Marking：96；Package：DFN2510A-10；ESD protection for ultra high-speed interfaces

PUSB3F96

Marking：96；Package：DFN2510A-10；ESD protection for ultra high-speed interfaces

PUSB3F97

Marking：96；Package：DFN2510A-10；ESD protection for ultra high-speed interfaces

2SD965

Marking：965；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES LowCollector-EmitterSaturationVoltage LargeCollectorPowerDissipationandCurrent MiniPowerTypePackage

2SD965-Q

Marking：965Q；Package：SOT-89；NPN Transistors

■Features ●LowCollector-EmitterSaturationVoltage ●LargeCollectorPowerDissipationandCurrent ●MiniPowerTypePackage

2SD965-R

Marking：965R；Package：SOT-89；NPN Transistors

■Features ●LowCollector-EmitterSaturationVoltage ●LargeCollectorPowerDissipationandCurrent ●MiniPowerTypePackage

2SD965-S

Marking：965S；Package：SOT-89；NPN Transistors

■Features ●LowCollector-EmitterSaturationVoltage ●LargeCollectorPowerDissipationandCurrent ●MiniPowerTypePackage

2SD965-T

Marking：965T；Package：SOT-89；NPN Transistors

■Features ●LowCollector-EmitterSaturationVoltage ●LargeCollectorPowerDissipationandCurrent ●MiniPowerTypePackage

BUK9M67-60EL

Marking：9676EL；Package：LFPAK33；Single N-channel 60 V, 44 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology

1.Generaldescription Single,logiclevel,N-channelMOSFETinLFPAK33usingApplicationspecific(ASFET)Enhanced SOAtechnology.ThisproducthasbeendesignedandqualifiedtoAEC-Q101foruseinlinear modeinairbagapplications. 2.Featuresandbenefits ?Fullyautomotivequalifiedt

BUK9M6R0-40H

Marking：96H040；Package：LFPAK33；N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33

1.Generaldescription AutomotivequalifiedlogiclevelN-channelMOSFETinanLFPAK33packageusingTrench9 TrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtoAEC-Q101foruseinhigh performanceautomotiveapplications. 2.Featuresandbenefits ?Fullyautomotivequali