2SD965

Marking：965；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES LowCollector-EmitterSaturationVoltage LargeCollectorPowerDissipationandCurrent MiniPowerTypePackage

HED965

Marking：965；Package：SOT-89；GENERAL PURPOSE TRANSISTOR

HED965A

Marking：965；Package：SOT-89；GENERAL PURPOSE TRANSISTOR

2SD965-Q

Marking：965Q；Package：SOT-89；NPN Transistors

■Features ●LowCollector-EmitterSaturationVoltage ●LargeCollectorPowerDissipationandCurrent ●MiniPowerTypePackage

2SD965-R

Marking：965R；Package：SOT-89；NPN Transistors

■Features ●LowCollector-EmitterSaturationVoltage ●LargeCollectorPowerDissipationandCurrent ●MiniPowerTypePackage

2SD965-S

Marking：965S；Package：SOT-89；NPN Transistors

■Features ●LowCollector-EmitterSaturationVoltage ●LargeCollectorPowerDissipationandCurrent ●MiniPowerTypePackage

2SD965-T

Marking：965T；Package：SOT-89；NPN Transistors

■Features ●LowCollector-EmitterSaturationVoltage ●LargeCollectorPowerDissipationandCurrent ●MiniPowerTypePackage

BUK9Y65-100E

Marking：96510E；Package：LFPAK56；N-channel 100 V, 65 mΩ logic level MOSFET in LFPAK56

1.Generaldescription LogiclevelN-channelMOSFETinanLFPAK56(PowerSO8)packageusingTrenchMOS technology.ThisproducthasbeendesignedandqualifiedtoAECQ101standardforuse inhighperformanceautomotiveapplications. 2.Featuresandbenefits ?Q101compliant ?Repetitiveaval