98AON04079D中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Employing the Schottky Barrier principle in a large area

metal?to?silicon power diode. State of the art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity diodes in surface mount applications

where compact size and weight are critical to the system.

Features

? Small Compact Surface Mountable Package with J?Bent Leads

? Rectangular Package for Automated Handling

? Highly Stable Oxide Passivated Junction

? Very Low Forward Voltage Drop

? Guardring for Stress Protection

? NRVBA Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable*

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics:

? Case: Epoxy, Molded

? Weight: 70 mg (approximately)

? Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

? Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

? Shipped in 12 mm tape, 5000 units per 13 inch reel

? Polarity: Cathode Lead Indicated by Polarity Band

? ESD Ratings: Machine Model = C

ESD Ratings: Human Body Model = 3B

? Device Meets MSL 1 Requirements