98AON04079D中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

This device employs the Schottky Barrier principle in a

metal?to?silicon power rectifier. Features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low

voltage, high frequency switching power supplies; free wheeling

diodes and polarity protection diodes.

Features

? Compact Package with J?Bend Leads Ideal for Automated Handling

? Highly Stable Oxide Passivated Junction

? Guard?Ring for Overvoltage Protection

? Low Forward Voltage Drop

? NBR and NRVB Prefixes for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC?Q101 Qualified and PPAP Capable*

Mechanical Characteristics

? Case: Molded Epoxy

? Epoxy Meets UL 94 V?0 @ 0.125 in

? Weight: 70 mg (SMA), 95 mg (SMB) (Approximately)

? Cathode Polarity Band

? Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

? Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

? ESD Ratings:

? Charged Device Model > 1000 V (Class C5)

? Human Body Model = 3B

? These Devices are Pb?Free and are RoHS Compliant

? Device Meets MSL1 Requirements