98AON10527D中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

This logic level vertical power MOSFET is a general purpose part

that provides the “best of design” available today in a low cost power

package. Avalanche energy issues make this part an ideal design in.

The drain?to?source diode has a ideal fast but soft recovery.

Features

? Ultra?Low RDS(on), Single Base, Advanced Technology

? SPICE Parameters Available

? Diode is Characterized for use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperatures

? High Avalanche Energy Specified

? ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0

? NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable

? These Devices are Pb?Free and are RoHS Compliant

Typical Applications

? Power Supplies

? Inductive Loads

? PWM Motor Controls

? Replaces MTD20N03L in many Applications