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98AON13449G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

98AON13449G
廠商型號(hào)

98AON13449G

功能描述

Photo FET Optocouplers

文件大小

338.65 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-10 12:51:00

98AON13449G規(guī)格書(shū)詳情

General Description

The H11FXM series consists of a Gallium?Aluminum?Arsenide

IRED emitting diode coupled to a symmetrical bilateral silicon

photo?detector. The detector is electrically isolated from the input

and performs like an ideal isolated FET designed for distortion?free

control of low level AC and DC analog signals. The H11FXM series

devices are mounted in dual in?line packages.

Features

? As a Remote Variable Resistor:

? ≤ 100  to ≥ 300 M

? ≤15 pF Shunt Capacitance

? ≥100 G I/O Isolation Resistance

? As an Analog Switch:

? Extremely Low Offset Voltage

? 60 Vpk?pk Signal Capability

? No Charge Injection or Latch?Up

? UL Recognized (File #E90700)

? These are Pb?Free Devices

Application

? As a Remote Variable Resistor:

? Isolated Variable Attenuator

? Automatic Gain Control

? Active Filter Fine Tuning/Band Switching

? As an Analog Switch:

? Isolated Sample and Hold Circuit

? Multiplexed, Optically Isolated A/D Conversion

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