98AON13450G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

General Description

The H11FXM series consists of a Gallium?Aluminum?Arsenide

IRED emitting diode coupled to a symmetrical bilateral silicon

photo?detector. The detector is electrically isolated from the input

and performs like an ideal isolated FET designed for distortion?free

control of low level AC and DC analog signals. The H11FXM series

devices are mounted in dual in?line packages.

Features

? As a Remote Variable Resistor:

? ≤ 100  to ≥ 300 M

? ≤15 pF Shunt Capacitance

? ≥100 G I/O Isolation Resistance

? As an Analog Switch:

? Extremely Low Offset Voltage

? 60 Vpk?pk Signal Capability

? No Charge Injection or Latch?Up

? UL Recognized (File #E90700)

? These are Pb?Free Devices

Application

? As a Remote Variable Resistor:

? Isolated Variable Attenuator

? Automatic Gain Control

? Active Filter Fine Tuning/Band Switching

? As an Analog Switch:

? Isolated Sample and Hold Circuit

? Multiplexed, Optically Isolated A/D Conversion