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98AON13666G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

98AON13666G
廠商型號(hào)

98AON13666G

功能描述

MOSFET - Dual N-Channel, Asymmetric, POWERTRENCH Power Clip 30 V

文件大小

485.23 Kbytes

頁(yè)面數(shù)量

13 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱(chēng)

ONSEMI安森美半導(dǎo)體

中文名稱(chēng)

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-10 23:00:00

98AON13666G規(guī)格書(shū)詳情

General Description

This device includes two specialized N-Channel MOSFETs in

a dual package. The switch node has been internally connected to

enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFET (Q2) have

been designed to provide optimal power efficiency.

Features

Q1: N-Channel

? Max RDS(on) = 5.0 m at VGS = 10 V, ID = 17 A

? Max RDS(on) = 6.5 m at VGS = 4.5 V, ID = 14 A

Q2: N-Channel

? Max RDS(on) = 2.4 m at VGS = 10 V, ID = 25 A

? Max RDS(on) = 3.0 m at VGS = 4.5 V, ID = 22 A

? Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses.

? MOSFET Integration Enables Optimum Layout for Lower Circuit

Inductance and Reduced Switch Node Ringing.

? RoHS Compliant

Applications

? Computing

? Communications

? General Purpose Point of Load

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