98AON13673G中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書

General Description

This P?Channel MOSFET is produced using onsemi’s advanced

POWERTRENCH process that has been optimized for RDS(ON),

switching performance and ruggedness.

Features

? Max RDS(on) = 4 m at VGS = ?4.5 V, ID = ?18 A

? Max RDS(on) = 5.7 m at VGS = ?2.5 V, ID = ?16 A

? Max RDS(on) =11.5 m at VGS = ?1.8 V, ID = ?11 A

? High Performance Trench Technology for Extremely Low RDS(on)

? High Power and Current Handling Capability in a Widely Used

Surface Mount Package

? This Device is Pb?Free, Halide Free and is RoHS Compliant

Applications

? Load Switch

? Battery Management

? Power Management

? Reverse Polarity Protection