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CEM9956A

DualN-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100UISTested ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?SetTopBox ?LowCurrentDC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

CEM9956A

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●30V,3.7A,RDS(ON)=80m?@VGS=10V.RDS(ON)=110m?@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM9956AJPT

DualN-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT48Ampere FEATURE *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Smallpackage.(TO-252A) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. CONSTRUCTION *N-Ch

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

IRF9956

30V2N-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount VeryLowGateChargeandSwitchingLosses FullyAvalancheRated Lead-Free VDS(V)=30V ID=2.2A(VGS=-10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRF9956

PowerMOSFET(Vdss=30V,Rds(on)=0.10ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9956PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9956PBF

ULTRALOWONTESISTANCE

IRF

International Rectifier

IRF9956TR

30V2N-ChannelMOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount VeryLowGateChargeandSwitchingLosses FullyAvalancheRated Lead-Free VDS(V)=30V ID=2.2A(VGS=-10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

NDS9956

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDS9956A

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    9956M

  • 制造商:

    ebm-papst Inc.

  • 類別:

    風(fēng)扇,熱管理 > AC 風(fēng)扇

  • 系列:

    9900

  • 包裝:

  • 電壓 - 額定:

    230VAC

  • 大小 / 尺寸:

    方形 - 119mm 長(zhǎng) x 119mm 高

  • 寬度:

    25.00mm

  • 氣流:

    61.2 CFM(1.71m3/min)

  • 軸承類型:

    滾珠

  • 風(fēng)扇類型:

    管軸式

  • 噪聲:

    35.0dB(A)

  • 功率 (W):

    10.00W

  • RPM:

    2250 RPM

  • 端接:

    2 端子

  • 工作溫度:

    -40 ~ 176°F(-40 ~ 80°C)

  • 認(rèn)證機(jī)構(gòu):

    CE,CSA,UL,VDE

  • 重量:

    0.716 磅(324.77 g)

  • 描述:

    FAN AXIAL 119X25MM 230VAC TERM

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更多9956M供應(yīng)商 更新時(shí)間2025-4-23 10:08:00