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1SS181

Marking:A1;Package:SOT-23;Silicon Epitaxial Planar Switching Diode

Features ?Lowforwardvoltage ?Fastreverserecoverytime ?Smalltotalcapacitance

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司

1SS400G

Marking:A1;Package:SOD-723;SOD-723 Plastic-Encapsulate Diodes

FEATURES Smallsurfacemountingtype Highpseed Highreliabilitywithhighsurgecurrenthandingcapability

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

2SJ243

Marking:A1;Package:SC-75;MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SJ243isaP-channelverticaltypeMOSFETthatisdrivenat 2.5V. BecausethisMOSFETcanbedrivenonalowvoltageandbecauseit isnotnecessarytoconsiderthedrivecurrent,the2SJ243isidealfor drivingtheactuatorofpower-sav

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ABAW56-HF

Marking:A1;Package:SOT-23;SMD Switching Diode

Features -Fastswitchingspeed. -Highconductance. -Surfacemountpackageideallysuited forautomaticinsertion. -Forgeneralpurposeswitchingapplications. -AEC-Q101Qualified.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

AD-BAW56

Marking:A1;Package:SOT-23;Plastic-Encapsulated Diode

FEATURES ?Highswitchingspeed ?Forgeneralpurposeswitchingapplications ?Highconductance ?AEC-Q101qualified

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

BAS16H

Marking:A1;Package:SOD123F;High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallandflatleadSOD123FSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits ?Highswitchingspeed:trr≤4ns ?Lowcapacitance ?Lowleakagecurrent ?Reversevoltage:VR≤100V ?Repetitivepe

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BAS16H

Marking:A1;Package:SOD123F;High-speed switching diodes

Featuresandbenefits ?Highswitchingspeed:trr?4ns ?Lowleakagecurrent ?Repetitivepeakreversevoltage: VRRM?100V ?AEC-Q101qualified ?Lowcapacitance ?Reversevoltage:VR?100V ?SmallSMDplasticpackages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BAS16H-Q

Marking:A1;Package:SOD123F;High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallandflatleadSOD123FSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits ?Highswitchingspeed:trr≤4ns ?Lowcapacitance ?Lowleakagecurrent ?Reversevoltage:VR≤100V ?Repetitivepe

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BAW56

Marking:A1;Package:SOT23;High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Highswitchingspeed:trr≤4ns ?Lowcapacitance:Cd≤2pF ?Lowleakagecurrent ?Reversevoltage:VR≤90V ?SmallSM

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BAW56

Marking:A1;Package:SOT-23;Dual Switching Diodes

FEATURES EpoxymeetsUL-94V-0flammabilityrating MoistureSensitivityLevel1 Fastswitchingspeed HighConductance SurfacemountpackageideallySuitedforAutomatic Insertion

RFERFE international

RFE國(guó)際公司RFE國(guó)際股份有限公司

晶體管資料

  • 型號(hào):

    A10

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+R

  • 性質(zhì):

    表面帖裝型 (SMD)_差分放大器射極輸出 (Dual)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    5

  • 可代換的型號(hào):

    FMA10A,

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號(hào):

    H-21

  • vtest:

    50

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    0

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    A1

  • 制造商:

    MACOM Technology Solutions

  • 類別:

    RF/IF,射頻/中頻和 RFID > 射頻放大器

  • 系列:

    A1

  • 包裝:

  • 頻率:

    1MHz ~ 600MHz

  • P1dB:

    -1dBm

  • 增益:

    16dB

  • 噪聲系數(shù):

    2.4dB

  • 射頻類型:

    通用

  • 電壓 - 供電:

    15V

  • 電流 - 供電:

    9mA

  • 測(cè)試頻率:

    1MHz ~ 600MHz

  • 封裝/外殼:

    TO-8 形式,4 引線

  • 供應(yīng)商器件封裝:

    TO-8

  • 描述:

    AMPLIFIER,CASCADABLE

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更多A1供應(yīng)商 更新時(shí)間2025-1-22 13:26:00