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A5G35H055N_V01中文資料恩智浦?jǐn)?shù)據(jù)手冊(cè)PDF規(guī)格書
A5G35H055N_V01規(guī)格書詳情
This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 3400 to 3600 MHz.
This part is characterized and performance is guaranteed for applications
operating in the 3400 to 3600 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
Features
? High terminal impedances for optimal broadband performance
? Improved linearized error vector magnitude with next generation signal
? Able to withstand extremely high output VSWR and broadband operating
conditions
? Designed for low complexity linearization systems
? Optimized for massive MIMO active antenna systems for 5G base stations
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
56000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
NXP SEMICONDUCTORS |
22+ |
N/A |
4106 |
原裝原裝原裝 |
詢價(jià) | ||
23+ |
SOP-16 |
3000 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | |||
21+ |
N/A |
6541 |
全新原裝虧本出 |
詢價(jià) | |||
NXP(恩智浦) |
2022+ |
原廠封裝 |
25000 |
100%進(jìn)口原裝正品現(xiàn)貨,公司原裝現(xiàn)貨眾多歡迎加微信咨 |
詢價(jià) | ||
NXP SEMICONDUCTORS |
22+ |
NA |
30000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
NXP(恩智浦) |
23+ |
- |
7087 |
NXP原廠渠道,2小時(shí)快速發(fā)貨,大量現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
NXP(恩智浦) |
23+ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | |||
NXP Semiconductors |
22+ |
Dual N-Channel |
2864 |
航宇科工半導(dǎo)體-中國(guó)航天科工集團(tuán)戰(zhàn)略合作伙伴! |
詢價(jià) | ||
24+ |
LLP8 |
3629 |
原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來(lái)電! |
詢價(jià) |