A5G35H110N_V01中文資料恩智浦?jǐn)?shù)據(jù)手冊PDF規(guī)格書

This 15.1 W asymmetrical Doherty RF power GaN transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 3300 to 3700 MHz.

This part is characterized and performance is guaranteed for applications

operating in the 3300 to 3700 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

Features

? High terminal impedances for optimal broadband performance

? Improved linearized error vector magnitude with next generation signal

? Able to withstand extremely high output VSWR and broadband operating

conditions

? Designed for low complexity linearization systems

? Optimized for massive MIMO active antenna systems for 5G base stations