1.0SMBJ90A

Marking：A90；1000 WATT TVS COMPONENT

10BJ9.0A

Marking：A9；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, r epetitionrate(dutycycle):0.01

10BJ90A

Marking：A90；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, r epetitionrate(dutycycle):0.01

10SMBJ90A

Marking：A90；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

2SA933AS

Marking：A933AS；Package：SPT/SC-72；General Purpose Transistor

2SA933AS

Marking：A933AS；Package：SPT/SC-72；General Purpose Transistor (50V, 0.15A)

2SA933AS

Marking：A933AS；Package：SPT/SC-72；General Purpose Transistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

2SA933AS

Marking：A933AS；Package：SPT/SC-72；General Purpose Transistor

2SA950

Marking：A950；TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

AudioPowerAmplifierApplications ?HighhFE:hFE=100~320 ?1Woutputapplications ?Complementaryto2SC2120

74AHC1G09GW

Marking：A9；Package：SOT-353；2-input AND gate with open-drain output

Generaldescription The74AHC1G09isahigh-speedSi-gateCMOSdevice.The74AHC1G09providesthe2-inputANDfunctionwithopen-drainoutput.Theoutputofthe74AHC1G09isanopendrainandcanbeconnectedtootheropen-drainoutputstoimplementactive-LOW,wired-ORoractive-HIGHwired-AND

74AHC1G09GW

Marking：A9；Package：SOT-353；2-input AND gate with open-drain output

Generaldescription The74AHC1G09isahigh-speedSi-gateCMOSdevice.The74AHC1G09providesthe2-inputANDfunctionwithopen-drainoutput.Theoutputofthe74AHC1G09isanopendrainandcanbeconnectedtootheropen-drainoutputstoimplementactive-LOW,wired-ORoractive-HIGHwired-AND

74AHC1G09GW-Q100

Marking：A9；Package：TSSOP5；2-input AND gate with open-drain output

1.Generaldescription The74AHC1G09-Q100isasingle2-inputANDgatewithopen-drainoutput.Inputsareovervoltage tolerant.Thisfeatureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. ThisproducthasbeenqualifiedtotheAutomotiveElectronicsCouncil(AEC)

74AUP1G98GM

Marking：a9；Package：SOT886；Low-power configurable multiple function gate

1.Generaldescription The74AUP1G98isaconfigurablemultiplefunctiongatewithSchmitt-triggerinputs.Thedevice canbeconfiguredasanyofthefollowinglogicfunctionsMUX,AND,OR,NAND,NOR,inverter andbuffer;usingthe3-bitinput.AllinputscanbeconnecteddirectlytoVCCorGND

74AUP1G98GX

Marking：a9；Package：SOT1255-2；Low-power configurable multiple function gate

1.Generaldescription The74AUP1G98isaconfigurablemultiplefunctiongatewithSchmitt-triggerinputs.Thedevice canbeconfiguredasanyofthefollowinglogicfunctionsMUX,AND,OR,NAND,NOR,inverter andbuffer;usingthe3-bitinput.AllinputscanbeconnecteddirectlytoVCCorGND

74AUP2G98DP

Marking：a9；Package：TSSOP10；Low-power dual PCB configurable multiple function gate

A92

Marking：A92；Package：SOT-89；PNP Silicon Epitaxial Planar Transistor

FEATURES PCM=0.5W(Tamb=25℃). Highvoltage. Complementary:A42. APPLICATIONS Designedforhighvoltagedriverappilication.

A92

Marking：A92Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Highvoltage

A92-TA

Marking：A92Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Highvoltage

A94

Marking：A94；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Highvoltage

A94

Marking：A94Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES HighBreakdownVoltage