ACE12008A中文資料ACE數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
ACE12008A |
| 功能描述 | N&P Pair Enhancement Mode MOSFET |
| 文件大小 |
232.42 Kbytes |
| 頁(yè)面數(shù)量 |
3 頁(yè) |
| 生產(chǎn)廠商 | ACE Technology Co., LTD. |
| 企業(yè)簡(jiǎn)稱 |
ACE |
| 中文名稱 | ACE Technology Co., LTD.官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-5-18 15:19:00 |
| 人工找貨 | ACE12008A價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
ACE12008A規(guī)格書(shū)詳情
Description
The ACE12008A is the N&P Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high-density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching, low in-line power loss, and resistance to transients are
needed.
Features
? N-Channel
20V/0.65A, RDS(ON)=380m?@VGS=4.5V
20V/0.55A, RDS(ON)=450m?@VGS=2.5V
20V/0.45A, RDS(ON)=800m?@VGS=1.8V
? P-Channel
-20V/0.45A, RDS(ON)= 520m? @VGS=-4.5V
-20V/0.35A, RDS(ON)= 700m? @VGS=-2.5V
-20V/0.25A, RDS(ON)= 1500m? @VGS=-1.8V
? Super high-density cell design for extremely low RDS (ON)
? Exceptional on-resistance and maximum DC current capability
Application
? Power Management in Note book
? Portable Equipment
? Battery Powered System
? DC/DC Converter
? Load Switch
? DSC
? LCD Display inverter
