ACE12021AKG+H中文資料ACE數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

The ACE12021A is the Dual P-Channel enhancement mode Power field effect transistors are

produced using high cell density, DMOS trench technology. This high-density process is especially

tailored to minimize on-state resistance and provide superior switching performance. These devices are

particularly suited for low voltage applications such as notebook computer power management and other

battery power circuits where high-side switching, low in-line power loss, and resistance to transients are

needed.

Features

? -20V/0.45A, RDS(ON)=520m?@VGS=-4.5V

? -20V/0.35A, RDS(ON)=700m?@VGS=-2.5V

? -20V/0.25A, RDS(ON)=1500m?@VGS=-1.8V

? Super high-density cell design for extremely low RDS (ON)

? Exceptional on-resistance and maximum DC current capability

Application

? Power Management in Note book

? Portable Equipment

? Battery Power Systems

? DC/DC Converter

? Load Switch

? DSC

? LCD Display inverter