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首頁 >ACTR430>規(guī)格書列表

零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
AOB430	文件：128.25 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOB430usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardproductAOB430isPb-free(meetsROHS	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOB430	文件：321.51 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=63mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOB430L	文件：128.25 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOB430usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardproductAOB430isPb-free(meetsROHS	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOB430Y	文件：131.41 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOB430YusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardproductAOB430YisPbfree,insidean	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOB430YL	文件：131.41 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOB430YusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardproductAOB430YisPbfree,insidean	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOT430	文件：80.21 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOT430usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOT430isPb-free(meetsROHS&Sony259specifications). Fea	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOT430	文件：999.76 Kbytes Page：8 Pages	N-Channel80V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested APPLICATIONS ?PrimarySideSwitching ?SynchronousRectification ?DC/ACInverters ?LEDBacklighting	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司	VBSEMI
AOT430	文件：304.21 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=80A@TC=25℃ ?DrainSourceVoltage- :VDSS=75V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=11.5mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lo	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AWS430	文件：370.09 Kbytes Page：3 Pages	AutomaticWeatherStationAWS430 Features ?Specificallydesignedforcritical maritimeweatherapplications ?High-qualityanti-corrosivedesign ?ComplieswithLloyd’sRegister andIEC60945requirementsfor applicableparts ?Highdataavailability ?Built-intestproceduresanddata validation ?Accuratetruewindc	VAISALAVaisala 維薩拉維薩拉（北京）測量技術(shù)有限公司	VAISALA
B430	文件：80.89 Kbytes Page：1 Pages	SiliconBridgeRectifier	EDAL Edal Industries, Inc.	EDAL

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詳細(xì)參數(shù)

型號：
ACTR430
制造商：
ACT
制造商全稱：
Advanced Crystal Technology
功能描述：
true one-port, surface-acoustic-wave(SAW) resonator

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市永貝爾科技有限公司	ACTR430	ACT	23+	原廠原包	19960	只做進(jìn)口原裝終端工廠免費(fèi)送樣	詢價(jià)

更多ACTR430供應(yīng)商更新時(shí)間2025-4-26 15:00:00

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