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AOB430YL中文資料萬(wàn)國(guó)半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

AOB430YL
廠商型號(hào)

AOB430YL

功能描述

N-Channel Enhancement Mode Field Effect Transistor

文件大小

131.41 Kbytes

頁(yè)面數(shù)量

5 頁(yè)

生產(chǎn)廠商 Alpha & Omega Semiconductors
企業(yè)簡(jiǎn)稱(chēng)

AOSMD萬(wàn)國(guó)半導(dǎo)體

中文名稱(chēng)

美國(guó)萬(wàn)國(guó)半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-2-2 10:22:00

AOB430YL規(guī)格書(shū)詳情

General Description

The AOB430Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430Y is Pb free, inside and out. It uses Pb-free dia attach and plating material(meets ROHS & Sony 259 specifications). AOB430YL is a Green Product ordering option. AOB430Y and AOB430YL are electrically identical.

Features

VDS (V) = 60V

ID = 12A (Vgs=10V)

RDS(ON) < 63 m? (VGS =10V)

RDS(ON)

產(chǎn)品屬性

  • 型號(hào):

    AOB430YL

  • 制造商:

    AOSMD

  • 制造商全稱(chēng):

    Alpha & Omega Semiconductors

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

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