首頁 >AD-2SA1213SERIES>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
TRANSISTOR竊?NP竊 FEATURES Powerdissipation PCM:0.5W(Tamb=25℃) Collectorcurrent ICM:-2A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | KOOCHIN | ||
SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Complementaryto2SC2873 ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
SiliconPlanarEpitaxialTransistor FEATURES ●Lowsaturationvoltage ●Highspeedswitchingtime ●Smallflatpackage ●PC=1.0to2.0W(mountedonceramicsubstrate) ●Complementaryto2SC2873 | BILINChangzhou Galaxy Century Microelectronics Co.,Ltd. 銀河微電常州銀河世紀微電子股份有限公司 | BILIN | ||
PowerAmplifierApplications PowerAmplifierApplications PowerSwitchingApplications ?Lowsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Highspeedswitchingtime:tstg=1.0μs(typ.) ?Smallflatpackage ?PC=1.0to2.0W(mountedonaceramicsubstrate) ?Complementaryto2SC2873 | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
SiliconPlanarEpitaxialTransistor | BILINChangzhou Galaxy Century Microelectronics Co.,Ltd. 銀河微電常州銀河世紀微電子股份有限公司 | BILIN | ||
SiliconPNPtransistorinaSOT-89PlasticPackage Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Lowcollectorsaturationvoltage,Highspeedswitchingtime,smallflatpackage,Complementaryto2SC2873. Applications Poweramplifierandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司 | FOSHAN | ||
SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Complementaryto2SC2873 ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實業(yè)深圳市永而佳實業(yè)有限公司 | WINNERJOIN | ||
NewJerseySemi-ConductorProducts, NewJerseySemi-ConductorProducts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
TRANSISTOR(PNP) FEATURES ●Complementaryto2SC2873 ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金譽半導體深圳市金譽半導體股份有限公司 | HTSEMI | ||
PowerSwitchingApplications Features ●LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-1A) ●HighSpeedSwitchingTime:tstg=1.0us(typ.) ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SC2873 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
PNPSiliconMediumPowerTransistor *Features Lowpowerdissipation0.5W CollectorCurrent-2A *Stucture Epitaxialplanartype. PNPsilicontransistor. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
PowerAmplifierApplicationsPowerSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS) PowerAmplifierApplications PowerSwitchingApplications ?Lowsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Highspeedswitchingtime:tstg=1.0μs(typ.) ?Smallflatpackage ?PC=1.0to2.0W(mountedonaceramicsubstrate) ?Complementaryto2SC2873 | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
PowerAmplifierApplicationsPowerSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
PNPTransistors Features ●LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-1A) ●HighSpeedSwitchingTime:tstg=1.0us(typ.) ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SC2873 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風微電子廣東佑風微電子有限公司 | YFWDIODE | ||
Plastic-EncapsulateTransistors FEATURES ●Complementaryto2SC2873A ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實業(yè)有限公司 | SKTECHNOLGY | ||
Plastic-EncapsulateTransistors FEATURES ●Complementaryto2SC2873A ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實業(yè)有限公司 | SKTECHNOLGY | ||
Plastic-EncapsulateTransistors FEATURES ●Complementaryto2SC2873A ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實業(yè)有限公司 | SKTECHNOLGY |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
CJ(江蘇長電/長晶) |
23+ |
SOT-89-3L |
100000 |
原裝現(xiàn)貨、價格優(yōu)勢、可開發(fā)票 |
詢價 | ||
CJ(江蘇長電/長晶) |
23+ |
SOT893L |
6000 |
誠信服務(wù),絕對原裝原盤 |
詢價 | ||
24+ |
N/A |
56000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
CJ(江蘇長電/長晶) |
20+ |
SOT-23 |
3000 |
詢價 | |||
Opto22 |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
Opto 22 |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
MINI |
24+ |
SMD6 |
1 |
詢價 | |||
MINI |
22+ |
SMD6 |
8200 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價 | ||
AD |
22+ |
SSOP |
10000 |
原裝正品優(yōu)勢現(xiàn)貨供應(yīng) |
詢價 | ||
AD |
21+ |
SSOP |
5000 |
公司只做原裝,誠信經(jīng)營 |
詢價 |
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