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ADSP-BF609

BlackfinDualCore

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADSP-BF609

BlackfinDualCoreEmbeddedProcessor

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADSP-BF609

BlackfinDualCoreEmbeddedProcessor

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AN609

TinyICDebouncesPushbuttonSwitch

TinyICDebouncesPushbuttonSwitch Whenapush-buttonisusedtomanuallyresetaμP,ringingfromtheswitchmaycauseafalseresetoutputsignalwhentheswitchispressandde-pressed.Maximsmicroprocessorsupervisorshaveadebouncedmanualresetinputtohelpignorethisringing.

MaximMaxim Integrated Products

美信美信半導(dǎo)體

AOD609

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD609/LusesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedinH-bridge,Invertersandotherapplications.AOD609andAOD609Lareelectricallyidentical. -RoHSCompliant -AOD609LisHalogenFree

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOD609

N-andP-Channel40V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested APPLICATIONS ?CCFLInverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

AOD609

ComplementaryEnhancementModeFieldEffectTransistor

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOP609

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAOP609usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedinH-bridge,Invertersandotherapplications.StandardProductAOP609isPbfree(meetsROHS&Sony259specifications). AOP609L

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOP609L

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAOP609usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedinH-bridge,Invertersandotherapplications.StandardProductAOP609isPbfree(meetsROHS&Sony259specifications). AOP609L

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

APT609RKVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=1A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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