ADL8121-EVALZ開發(fā)板套件編程器的射頻評(píng)估開發(fā)套件開發(fā)板規(guī)格書PDF中文資料

ADL8121-EVALZ屬于開發(fā)板套件編程器的射頻評(píng)估開發(fā)套件開發(fā)板。由亞德諾半導(dǎo)體技術(shù)有限公司制造生產(chǎn)的ADL8121-EVALZ射頻評(píng)估和開發(fā)套件，開發(fā)板本系列中的產(chǎn)品適用于在已知實(shí)施環(huán)境中，提供能訪問射頻相關(guān)器件的功能或者有助于訪問該功能。所含的焦點(diǎn)產(chǎn)品范圍從射頻信號(hào)鏈元器件（如放大器和檢測(cè)器）到模塊化收發(fā)器，以及不直接包含焦點(diǎn)產(chǎn)品的適配器硬件，但此類硬件可供方便地訪問用戶單獨(dú)提供的特定射頻產(chǎn)品或系列。

GENERAL DESCRIPTION

The ADL8121 is a gallium arsenide (GaAs), monolithic microwave

integrated circuit (MMIC), pseudomorphic high electron mobility

transistor (pHEMT), low noise wideband amplifier that operates

from 0.025 GHz to 12 GHz.

The ADL8121 provides a typical gain of 16.5 dB, a 2.5 dB typical

noise figure, and a typical output third-order intercept (OIP3) of

36 dBm across the 0.025 GHz to 10 GHz frequency range, requiring

only 95 mA from a 5 V supply voltage. The saturated output

power (PSAT) of 21.5 dBm typical across the 0.025 GHz to

10 GHz frequency range enables the low noise amplifier (LNA)

to function as a local oscillator (LO) driver for many of Analog

Devices, Inc., balanced, in-phase and quadrature (I/Q) or image

rejection mixers.

The ADL8121 also features inputs and outputs that are internally

matched to 50 Ω, making the device ideal for surface-mounted

technology (SMT)-based and is housed in a RoHS-compliant, 2 mm

× 2 mm, 6-lead LFCSP.

FEATURES

? Low noise figure: 2.5 dB typical at 0.025 GHz to 10 GHz

? Single positive supply (self biased)

? High gain: 16.5 dB typical at 0.025 GHz to 10 GHz

? High OIP3: 36 dBm typical at 0.025 GHz to 10 GHz

? RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP

APPLICATIONS

? Test instrumentation

? Military communications

? Military radar

? Telecommunications