ADL8142ACPZN-CSLRF/IF射頻/中頻RFID的射頻放大器規(guī)格書PDF中文資料

ADL8142ACPZN-CSL屬于RF/IF射頻/中頻RFID的射頻放大器。由亞德諾半導(dǎo)體技術(shù)有限公司制造生產(chǎn)的ADL8142ACPZN-CSL射頻放大器在射頻應(yīng)用中，射頻放大器產(chǎn)品可用于信號增益和緩沖。這些產(chǎn)品與通用運(yùn)算放大器的不同之處在于，它們通常適用于更高的頻率，更傾向于提供不可調(diào)節(jié)的固定增益，并且輸入或輸出阻抗值符合常用傳輸線特性阻抗。

GENERAL DESCRIPTION

The ADL8142S-CSL is a gallium arsenide (GaAs), monolithic microwave

integrated circuit (MMIC), pseudomorphic high electron

mobility transistor (pHEMT), low noise wideband amplifier that

operates from 23 GHz to 31 GHz. The ADL8142S-CSL provides a

typical gain of 27 dB, a 1.6 dB typical noise figure, and a typical output

third-order intercept (OIP3) of 21.5 dBm at 27 GHz to 31 GHz,

requiring only 25 mA from a 2 V supply voltage. Note that the OIP3

can be improved with larger drain currents. The ADL8142S-CSL

also features inputs and outputs that are ac-coupled and internally

matched to 50 Ω, making it ideal for high capacity microwave radio

applications.

The ADL8142S-CSL is housed in a RoHS-compliant, 2 mm × 2

mm, 8-lead LFCSP. Additional application and technical information

can be found in the Commercial Space Products Program brochure

and the ADL8142 data sheet.

FEATURES

? Low noise figure: 1.6 dB typical at 27 GHz to 31 GHz

? Single positive supply (self biased)

? High gain: 27 dB typical at 27 GHz to 31 GHz

? High OIP3: 21.5 dBm typical at 27 GHz to 31 GHz

? RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP

COMMERCIAL SPACE FEATURES

? Wafer diffusion lot traceability

? Radiation lot acceptance test (RLAT)

? Total ionizing dose (TID)

? Radiation benchmark

? Single event latch-up (SEL)

APPLICATIONS

? Geosynchronous high throughput satellite (GEO HTS)

? Low Earth orbit (LEO) space payloads

? Satellite communication