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ADRV904X-HB/PCBZ

8T8R SoC with DFE, 400 MHz iBW RF Transceiver

FEATURES ?Eightdifferentialtransmitters(Tx) ?Eightdifferentialreceivers(Rx) ?Twodifferentialobservationreceivers(ORx) ?Tunablerange:600MHzto6000MHz ?Single-bandandMultiband(Nx2T2R/4T4R)capability ?Fourindividualbandprofileswithintunablerange(bandprofiles

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADRV904X-LB/PCBZ

8T8RSoCwithDFE,400MHziBWRFTransceiver

FEATURES ?Eightdifferentialtransmitters(Tx) ?Eightdifferentialreceivers(Rx) ?Twodifferentialobservationreceivers(ORx) ?Tunablerange:600MHzto6000MHz ?Single-bandandMultiband(Nx2T2R/4T4R)capability ?Fourindividualbandprofileswithintunablerange(bandprofiles

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADRV904X-MB/PCBZ

8T8RSoCwithDFE,400MHziBWRFTransceiver

FEATURES ?Eightdifferentialtransmitters(Tx) ?Eightdifferentialreceivers(Rx) ?Twodifferentialobservationreceivers(ORx) ?Tunablerange:600MHzto6000MHz ?Single-bandandMultiband(Nx2T2R/4T4R)capability ?Fourindividualbandprofileswithintunablerange(bandprofiles

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AN904

MAGNETICAMPLIFIERWITHLPR30CONTROLLER

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

APT904RAN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT904RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT904RCN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT904RDN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT904RGN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AR904

RECTIFIERDIODE

Repetitivevoltageupto2900V Meanforwardcurrent1230A Surgecurrent10.1kA

POSEICO

Power Semiconductors

AT-904

StriplineMountingFixedAttenuators(DCto8GHz)

HIROSEHirose Electric Company

廣瀨日本廣瀨電機(jī)株式會社

BF904

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904

N-channeldualgateMOS-FETs

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904A

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904A

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904A

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904AR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ADI/亞德諾
20+
EvaluationBoard
33680
ADI全新原裝-可開原型號增稅票
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ADI
20+
射頻元件
19
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ADI(亞德諾)
23+
NA
20094
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AD
1824+
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16
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ADI(亞德諾)
6000
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21+
原封裝
13880
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ADI(亞德諾)
21+
6000
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ADI(亞德諾)
22+
NA
10000
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23+
N/A
10000
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23+
NA
10000
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更多ADRV904X-HB/PCBZ供應(yīng)商 更新時(shí)間2024-12-26 18:53:00