零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SPIprotocolfortheSTPMC1meteringdevice | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
150VN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體 | AOSMD | ||
BluetoothMultimediaSoC 1.1.Features ?Operationvoltagefrom2.8Vto5.2V ?Bluetooth4.1+EDRcompliant ?-90dBmsensitivityfor1Mbpsmodeand5dBmtransmitpower ?-107dBmsensitivityFMreceiver ?1-wireor4-wiresSD-cardinterface ?USB2.0hostanddevice ?Integrated90dBSNRADCandstereoDAC | BEKENBeken Corporation 博通集成博通集成電路(上海)股份有限公司 | BEKEN | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,5.7A,RDS(ON)=24mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,26A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=39mW@VGS=4.5V. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,7.8A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,7.8A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,8.0A,RDS(ON)=25mW@VGS=10V. RDS(ON)=28mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=35mW@VGS=2.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,26A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=39mW@VGS=4.5V. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs GENERALDESCRIPTION TheDS3251(single),DS3252(dual),DS3253(triple),andDS3254(quad)lineinterfaceunits(LIUs)performthefunctionsnecessaryforinterfacingatthephysicallayertoDS3,E3,orSTS-1lines.EachLIUhasindependentreceiveandtransmitpathsandabuilt-injitterattenu | DallasDallas Semiconductor 亞德諾亞德諾半導(dǎo)體 | Dallas | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs GENERALDESCRIPTION TheDS3251(single),DS3252(dual),DS3253(triple),andDS3254(quad)lineinterfaceunits(LIUs)performthefunctionsnecessaryforinterfacingatthephysicallayertoDS3,E3,orSTS-1lines.EachLIUhasindependentreceiveandtransmitpathsandabuilt-injitterattenu | DallasDallas Semiconductor 亞德諾亞德諾半導(dǎo)體 | Dallas | ||
原廠資料 | ETC | |||
Integrated4-,6-and8-channelpassiveEMI-filternetworkwithhigh-levelESDprotection | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
CABLEASSEMBLYRG393/UBNCMALETONMALE | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
CABLEASSEMBLYRG393/UBNCMALETONMALE(LEADFREE) | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
CMOSSystemReset Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社 | MITSUMI | ||
ICforCMOSSystemReset Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社 | MITSUMI | ||
Low-powersignalchainsolutionsbasedonC5505DSPforportablemedicalapplicationdevelopment | TITexas Instruments 德州儀器美國(guó)德州儀器公司 | TI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
REALTEK/瑞昱 |
21+ |
QFN |
38 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
REALTEK/瑞昱 |
21+ |
QFN |
6000 |
原裝正品 |
詢價(jià) | ||
REALTEK/瑞昱 |
23+ |
QFN |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
REALTEK/瑞昱 |
22+ |
QFN |
9609 |
只有原裝 低價(jià) 實(shí)單必成 |
詢價(jià) | ||
REALTEK/瑞昱 |
23+ |
QFN |
6850 |
只做原廠原裝正品現(xiàn)貨!假一賠十! |
詢價(jià) | ||
REALTEK |
QFN |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
Realtek/瑞昱 |
24+ |
QFN |
80 |
原裝正品,假一罰十! |
詢價(jià) | ||
REALTEK(瑞昱) |
871+ |
25620 |
原裝正品,假一賠十 |
詢價(jià) | |||
REALTEK/瑞昱 |
23+ |
QFN |
5000 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋齑?詳 |
詢價(jià) | ||
REALTEK |
22+ |
QFN |
25000 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十 |
詢價(jià) |
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