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AM120P06-06B6L

P-Channel 60-V (D-S) MOSFET

KeyFeatures: ?LowrDS(on)trenchtechnology ?Lowthermalimpedance ?Fastswitchingspeed

AnalogPower

Analog Power

AM120P10-10P

P-Channel 100-V (D-S) MOSFET

KeyFeatures: ?LowrDS(on)trenchtechnology ?Lowthermalimpedance ?Fastswitchingspeed

AnalogPower

Analog Power

AM1214-100

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION TheAM1214-100deviceisahighpowerClassCtransistorspecificallydesignedforL-BandRadarpulseddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGEOMETRY ■METAL/CERAMICHERMETICPACKA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團

AM1214-130

RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS

DESCRIPTION TheAM1214-130isarugged,ClassCcommonbasedevicedesignedasdriverofAM1214-250fornewL-Bandmedium&longpulseradarapplications. Minimalamplitudedroopoveralongpulseof500microsec.isguaranteedbyathermaldesignincorporatinganoverlaysite-ballasteddi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團

AM1214-175

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION TheAM1214-175deviceisahighpowerClassCtransistorspecificallydesignedforL-Bandradarpulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■3:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGEOMET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團

AM1214-200

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION TheAM1214-200deviceisahighpowerClassCtransistorspecificallydesignedforL-BandRadarpulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGEOMETRY ■METAL/CERAMICHER

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團

AM1214-250

RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS

DESCRIPTION TheAM1214-250isarugged,ClassCcommonbasedevicedesignedfornewL-Bandmedium&longpulseradarapplications. Minimalamplitudedroopoveralongpulseof500microsec.isguaranteedbyathermaldesignincorporatinganoverlaysite-ballasteddiegeometry. ?REFRACTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團

AM1214-300

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION TheAM1214-300deviceisahighpowertransistorspecificallydesignedforL-Bandradarpulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■5:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGEOMETRY ■ME

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團

AM1214-300

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIAM1214-300isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: ?InternalInput/OutputMatchingNetwork ?CommonBase ?PG=6.5dbat325W/1400MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

AM1214-325

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION TheAM1214-325deviceisahighpowertransistorspecificallydesignedforL-Bandradarpulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■5:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGEOMETRY ■ME

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團

AM1217S

Three Channels Power Driver

Features 1)Surfacemountpackage(SOP16) 2)Lowersupplycurrent 3)LowerVCCstandbycurrent 4)LowerMOSFETsOnresistance 5)Overtemperatureprotection 6)Overtemperatureprotectionrecover 7)Overcurrentprotection(CH_BC)

AMTEKAMtek SEMICONDUCTORS CO., LTD

晶致半導(dǎo)體晶致半導(dǎo)體股份有限公司

AM1219S

Three Channels Power Driver

Features 1)Surfacemountpackage(SOP16) 2)Builtinsteadyvoltageoutput 3)Lowersupplycurrent 4)LowerVCCstandbycurrent 5)LowerMOSFETsOnresistance 6)Overtemperatureprotection 7)Overtemperatureprotectionrecover 8)Overcurrentprotection(CH_B&

AMTEKAMtek SEMICONDUCTORS CO., LTD

晶致半導(dǎo)體晶致半導(dǎo)體股份有限公司

AM1229D

Three Channels Power Motor Driver

Features 1)Surfacemountpackage(DFN3X3) 2)Builtinsteadyvoltageoutput 3)Lowersupplycurrent 4)LowerVCCstandbycurrent 5)LowerMOSFETsOnresistance 6)Overtemperatureprotection 7)Overtemperatureprotectionrecover 8)Overcurrentprotection(CH_B&

AMTEKAMtek SEMICONDUCTORS CO., LTD

晶致半導(dǎo)體晶致半導(dǎo)體股份有限公司

AM12N65

MOSFET 650V, 12A N-CHANNEL

FEATURE ?RDS(ON),typ.=0.60Ω@VGS=10V ?HighCurrentRating ?LowerCapacitance ?LowerTotalGateChargeMinimizeSwitchingLoss ?FastRecoveryBodyDiode DESCRIPTION TheAM12N65isavailableinTO-220andTO220F Packages. APPLICATIONS ?Adaptor ?Charger ?SMPSStandbyPower

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AM12NS10H

100V, N-CHANNEL SGT MOSFET

DESCRIPTION TheAM12NS10HisavailableinaTO-220,TO-220F, TO-252,TO-251,SOP8,TO-263-2andPDFN8(5x6) FEATURES ?FastSwitching ?LowOn-Resistance(RDS(ON)≤12mΩ) ?LowGateCharge ?LowReversetransfercapacitances ?Highavalancheruggedness APPLICATION ?Synchronousrectifi

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AM12NS10HDR

100V, N-CHANNEL SGT MOSFET

DESCRIPTION TheAM12NS10HisavailableinaTO-220,TO-220F, TO-252,TO-251,SOP8,TO-263-2andPDFN8(5x6) FEATURES ?FastSwitching ?LowOn-Resistance(RDS(ON)≤12mΩ) ?LowGateCharge ?LowReversetransfercapacitances ?Highavalancheruggedness APPLICATION ?Synchronousrectifi

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AM12NS10HDVR

100V, N-CHANNEL SGT MOSFET

DESCRIPTION TheAM12NS10HisavailableinaTO-220,TO-220F, TO-252,TO-251,SOP8,TO-263-2andPDFN8(5x6) FEATURES ?FastSwitching ?LowOn-Resistance(RDS(ON)≤12mΩ) ?LowGateCharge ?LowReversetransfercapacitances ?Highavalancheruggedness APPLICATION ?Synchronousrectifi

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AM12NS10HM8R

100V, N-CHANNEL SGT MOSFET

DESCRIPTION TheAM12NS10HisavailableinaTO-220,TO-220F, TO-252,TO-251,SOP8,TO-263-2andPDFN8(5x6) FEATURES ?FastSwitching ?LowOn-Resistance(RDS(ON)≤12mΩ) ?LowGateCharge ?LowReversetransfercapacitances ?Highavalancheruggedness APPLICATION ?Synchronousrectifi

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AM12NS10HM8VR

100V, N-CHANNEL SGT MOSFET

DESCRIPTION TheAM12NS10HisavailableinaTO-220,TO-220F, TO-252,TO-251,SOP8,TO-263-2andPDFN8(5x6) FEATURES ?FastSwitching ?LowOn-Resistance(RDS(ON)≤12mΩ) ?LowGateCharge ?LowReversetransfercapacitances ?Highavalancheruggedness APPLICATION ?Synchronousrectifi

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AM12NS10HPJ8R

100V, N-CHANNEL SGT MOSFET

DESCRIPTION TheAM12NS10HisavailableinaTO-220,TO-220F, TO-252,TO-251,SOP8,TO-263-2andPDFN8(5x6) FEATURES ?FastSwitching ?LowOn-Resistance(RDS(ON)≤12mΩ) ?LowGateCharge ?LowReversetransfercapacitances ?Highavalancheruggedness APPLICATION ?Synchronousrectifi

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
52000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
WALLINDUSTRIES
20+
NA
5000
全新原裝現(xiàn)貨,一片也是批量價。
 詢價
WALLINDUSTRIES
2308+
原裝正品
4285
十年專業(yè)專注 優(yōu)勢渠道商正品保證
 詢價
WALLINDUSTRIES
2023+
NA
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
ST
24+
130
現(xiàn)貨供應(yīng)
 詢價
ST
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
 詢價
ST/意法
23+
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價
ST
2022
高頻管
2058
原廠原裝正品,價格超越代理
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ST
24+
35
詢價
ST
9535
高頻管
35
原裝現(xiàn)貨海量庫存歡迎咨詢
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更多AM12供應(yīng)商 更新時間2024-11-16 11:06:00

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