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AM28F512A-120PI中文資料超威半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

AM28F512A-120PI
廠商型號

AM28F512A-120PI

功能描述

512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

文件大小

463.73 Kbytes

頁面數(shù)量

34

生產(chǎn)廠商 Advanced Micro Devices
企業(yè)簡稱

AMD超威半導(dǎo)體

中文名稱

美國超威半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-15 17:00:00

AM28F512A-120PI規(guī)格書詳情

GENERAL DESCRIPTION

The Am28F512A is a 512 Kbit Flash memory organized as 64 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F512A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F512A is erased when shipped from the factory.

DISTINCTIVE CHARACTERISTICS

■ High performance

— 70 ns maximum access time

■ CMOS low power consumption

— 30 mA maximum active current

— 100 μA maximum standby current

— No data retention power consumption

■ Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

■ 100,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V ?5

■ Latch-up protected to 100 mA from -1 V to VCC +1 V

■ Embedded Erase Electrical Bulk Chip-Erase

— Two seconds typical chip-erase including pre-programming

■ Embedded Program

— 4 μs typical byte-program including time-out

— One second typical chip program

■ Command register architecture for

microprocessor/microcontroller compatible write interface

■ On-chip address and data latches

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ Embedded algorithms for completely self-timed write/erase operations

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
AMD
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
AMD
22+
PLCC32
8200
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢!!
詢價(jià)