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AM28F512A-150JE中文資料超威半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
廠商型號(hào) |
AM28F512A-150JE |
功能描述 | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
文件大小 |
463.73 Kbytes |
頁(yè)面數(shù)量 |
34 頁(yè) |
生產(chǎn)廠商 | Advanced Micro Devices |
企業(yè)簡(jiǎn)稱 |
AMD【超威半導(dǎo)體】 |
中文名稱 | 美國(guó)超威半導(dǎo)體公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-11-15 17:00:00 |
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GENERAL DESCRIPTION
The Am28F512A is a 512 Kbit Flash memory organized as 64 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F512A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F512A is erased when shipped from the factory.
DISTINCTIVE CHARACTERISTICS
■ High performance
— 70 ns maximum access time
■ CMOS low power consumption
— 30 mA maximum active current
— 100 μA maximum standby current
— No data retention power consumption
■ Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
■ 100,000 write/erase cycles minimum
■ Write and erase voltage 12.0 V ?5
■ Latch-up protected to 100 mA from -1 V to VCC +1 V
■ Embedded Erase Electrical Bulk Chip-Erase
— Two seconds typical chip-erase including pre-programming
■ Embedded Program
— 4 μs typical byte-program including time-out
— One second typical chip program
■ Command register architecture for
microprocessor/microcontroller compatible write interface
■ On-chip address and data latches
■ Advanced CMOS flash memory technology
— Low cost single transistor memory cell
■ Embedded algorithms for completely self-timed write/erase operations