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AM82731

NPN RF POWER TRANSISTOR

DESCRIPTION: TheAM82731isaCommonBaseDeviceDesignedforPulsedS-BandRadarAmplifierApplications. FEATURESINCLUDE: ?Input/OutputMatching ?GoldMetallization ?EmitterBallasting

ASI

Advanced Semiconductor

AM82731-001

NPN RF POWER TRANSISTOR

DESCRIPTION: TheAM82731-001isaCommonBaseDeviceDesignedforPulsedS-BandRadarAmplifierApplications. FEATURESINCLUDE: ?Input/OutputMatching ?GoldMetallization ?EmitterBallasting

ASI

Advanced Semiconductor

AM82731-003

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION TheAM82731-003deviceisamediumpowersiliconbipolarNPNtransistorspecificallydesignedforS-Bandradarpulseddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■10:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTIMPEDANCEMATCHING ■

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

AM82731-006

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION TheAM82731-006deviceisamediumpowersiliconbipolarNPNtransistorspecificallydesignedforS-Bandradarpulseddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■5:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTIMPEDANCEMATCHING ■

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

AM82731-012

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION TheAM82731-012deviceisahighpowersiliconbipolarNPNtransistorspecificallydesignedforS-Bandradarpulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGEOMETRY ■META

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

AM82731-012

NPN RF POWER TRANSISTOR

DESCRIPTION: TheAM82731-012isaCommonBaseDeviceDesignedforPulsedS-BandPulseoutputanddriverRadarAmplifierApplications. FEATURESINCLUDE: ?Input/OutputMatching ?GoldMetallization ?EmitterBallasting

ASI

Advanced Semiconductor

AM82731-025

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION TheAM82731-025deviceisahighpowersiliconbipolarNPNtransistorspecificallydesignedforS-Bandradarpulsedoutputanddriverapplications. ■LOWPARASITIC,DOUBLELEVELMETALDESIGN ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■3:1VSWR@1dBOVERDRIVE ■LOW

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

AM82731-050

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION TheAM82731-050deviceisahighpowersiliconbipolarNPNtransistorspecificallydesignedforS-Bandradarpulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■RUGGEDIZEDVSWR3:1@1dBOVERDRIVE ■LOWTHERMALRESISTANCE ■INPUT/OUT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

AM82731-050

NPN RF POWER TRANSISTOR

DESCRIPTION: TheAM82731-050isaCommonBaseDeviceDesignedforPulsedS-BandPulseoutputanddriverApplications. FEATURESINCLUDE: ?Input/OutputMatching ?GoldMetallization ?EmitterBallasting

ASI

Advanced Semiconductor

AM82731-003

NPN RF POWER TRANSISTOR

ASI

Advanced Semiconductor

詳細(xì)參數(shù)

  • 型號：

    AM82731

  • 制造商：

    ASI

  • 制造商全稱：

    ASI

  • 功能描述：

    NPN RF POWER TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ST
24+
101
現(xiàn)貨供應(yīng)
 詢價(jià)
ST
23+
高頻管
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
高頻管
21+
9000
只做原裝假一罰十
 詢價(jià)
ST
21+
高頻管
23480
詢價(jià)
ST
25+
高頻管
18000
全新原裝
 詢價(jià)
ST/意法
23+
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價(jià)
AMD
16+
QFP
2500
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢!
 詢價(jià)
AMD
25+
QFP
6500
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
INTEL
24+
BGA
3500
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
INTEL
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
更多AM82731供應(yīng)商 更新時(shí)間2025-4-26 13:26:00

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