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AM83135-001中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

AM83135-001
廠商型號

AM83135-001
功能描述

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
文件大小

78.96 Kbytes
頁面數(shù)量

5 頁
生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS【意法半導體】

中文名稱

意法半導體（ST）集團官網(wǎng)
原廠標識
數(shù)據(jù)手冊

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更新時間

2024-11-6 21:40:00

AM83135-001規(guī)格書詳情

DESCRIPTION

The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 10:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency.

The AM83135-001 is supplied int the AMPAC? Hermet ic/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.

■ REFRACTORY/GOLD METALLIZATION

■ EMITTER SITE BALLASTED

■ 10:1 VSWR CAPABILITY

■ LOW THERMAL RESISTANCE

■ INPUT/OUTPUT MATCHING

■ OVERLAY GEOMETRY

■ METAL/CERAMIC HERMETIC PACKAGE

■ POUT = 1.0 W MIN. WITH 5.2 dB GAIN

產(chǎn)品屬性

  • 型號：

    AM83135-001

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

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