| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
AN5020 | SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | |
Flexible,Cloud-Managed,Premium-TierWi-Fi7AccessPoint APFeatures Five-RadioDesign ?2.4GHz(4x4:4) ?5GHz(4x4:4) ?6GHz(4x4:4) ?IoTRadio ?IoTRadio UnlikeotherAPsthatscanonlyparttime,theAP5020featuresadedicated2x2tri-frequencysensorthatmonitorsforroguedevicesfulltime,eliminatingtheriskofvulnerabilityand | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | ||
Flexible,Cloud-Managed,Premium-TierWi-Fi7AccessPoint APFeatures Five-RadioDesign ?2.4GHz(4x4:4) ?5GHz(4x4:4) ?6GHz(4x4:4) ?IoTRadio ?IoTRadio UnlikeotherAPsthatscanonlyparttime,theAP5020featuresadedicated2x2tri-frequencysensorthatmonitorsforroguedevicesfulltime,eliminatingtheriskofvulnerabilityand | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | ||
Flexible,Cloud-Managed,Premium-TierWi-Fi7AccessPoint APFeatures Five-RadioDesign ?2.4GHz(4x4:4) ?5GHz(4x4:4) ?6GHz(4x4:4) ?IoTRadio ?IoTRadio UnlikeotherAPsthatscanonlyparttime,theAP5020featuresadedicated2x2tri-frequencysensorthatmonitorsforroguedevicesfulltime,eliminatingtheriskofvulnerabilityand | EXTREMENETWORKS Extreme Networks. | EXTREMENETWORKS | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitc | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss. LowergatechargecoupledwithPowerMOSVI?optimizedgatelayout,deliversexceptionall | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss. LowergatechargecoupledwithPowerMOSVI?optimizedgatelayout,deliversexceptionall | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitc | ADPOW Advanced Power Technology | ADPOW | ||
6-BITMAGNETICANGULARPOSITIONENCODERWITHSERIALINTERFACE GeneralDescription Thedeviceprovidestheabsoluteangularpositionofasimplemagnetthatisplacedunderorabovethedevice’ssurface.ThedeviceincludestheHallSensorArray,signalconditioningandpostprocessingneededtogeneratea6-bitbinarycode.Thebinarycodecanbeeasilyacc | AMSCOams AG 艾邁斯歐司朗艾邁斯歐司朗股份公司 | AMSCO | ||
6-BITMAGNETICANGULARPOSITIONENCODERWITHSERIALINTERFACE GeneralDescription Thedeviceprovidestheabsoluteangularpositionofasimplemagnetthatisplacedunderorabovethedevice’ssurface.ThedeviceincludestheHallSensorArray,signalconditioningandpostprocessingneededtogeneratea6-bitbinarycode.Thebinarycodecanbeeasilyacc | AMSCOams AG 艾邁斯歐司朗艾邁斯歐司朗股份公司 | AMSCO |
詳細參數(shù)
- 型號：
AN5020
- 功能描述：
Remote-Control Amplifier/Preamplifier
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MAT |
24+ |
1670 |
詢價 | ||||
PANASANT |
2339+ |
SIP |
5650 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
Panasonic |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
PAN |
22+ |
SIL-9 |
8200 |
原裝現(xiàn)貨庫存.價格優(yōu)勢!! |
詢價 | ||
PANASONIC |
22+ |
SIP |
10000 |
原裝正品優(yōu)勢現(xiàn)貨供應(yīng) |
詢價 | ||
Panasonic |
20+ |
SIP |
36500 |
原裝現(xiàn)貨/放心購買 |
詢價 | ||
FUJI |
23+ |
原廠封裝 |
5177 |
現(xiàn)貨 |
詢價 | ||
Panasonic |
23+ |
SIP |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
Panasonic |
2023+ |
原廠封裝 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
Panasonic |
23+ |
SIP |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |
