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AOD412L

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAOD412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOD412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOT412

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOT412

iscN-ChannelMOSFETTransistor

?DESCRITION ?Besuitableforsynchronousrectificationforserverand generalpurposeapplications ?FEATURES ?DrainCurrent–ID=60A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=15.8mΩ(Max) ?100avalanchetested ?Minimu

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

AOT412L

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOU412

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOU412

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

AOU412L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOWF412

100VN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AQY412EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY412EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY412EHAX

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY412EHAZ

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

ASJ412

2.6mm&3.5mmAUDIOJACKSSTEREO&MONOEARPHONEJACKS

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

詳細(xì)參數(shù)

  • 型號(hào)：

    AOD412L

  • 制造商：

    AOSMD

  • 制造商全稱：

    Alpha & Omega Semiconductors

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ALPHA&OME
24+
TO-252
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
AOS
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
AOS
18+
TO-252
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
AOS/萬(wàn)代
23+
TO-252
69000
全新原裝現(xiàn)貨熱賣/代理品牌/可申請(qǐng)樣品和規(guī)格書(shū)
 詢價(jià)
AOS
20+
TO-252
60800
AOS原裝主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
AOSMD
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
A
22+
TO-252
6000
十年配單,只做原裝
 詢價(jià)
VB
TO-252
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
A
23+
TO-252
6000
原裝正品，支持實(shí)單
 詢價(jià)
A
22+
TO-252
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
更多AOD412L供應(yīng)商 更新時(shí)間2025-1-2 10:20:00

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