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AOD412L

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAOD412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOD412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOT412

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOT412

iscN-ChannelMOSFETTransistor

?DESCRITION ?Besuitableforsynchronousrectificationforserverand generalpurposeapplications ?FEATURES ?DrainCurrent–ID=60A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=15.8mΩ(Max) ?100avalanchetested ?Minimu

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOT412L

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOU412

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOU412

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOU412L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOWF412

100VN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AQY412EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY412EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

詳細(xì)參數(shù)

  • 型號:

    AOD412L

  • 制造商:

    AOSMD

  • 制造商全稱:

    Alpha & Omega Semiconductors

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ALPHA&OME
24+
TO-252
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
AOS
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
AOS
18+
TO-252
41200
原裝正品,現(xiàn)貨特價(jià)
詢價(jià)
AOS/萬代
23+
TO-252
69000
全新原裝現(xiàn)貨熱賣/代理品牌/可申請樣品和規(guī)格書
詢價(jià)
AOS
20+
TO-252
60800
AOS原裝主營型號-可開原型號增稅票
詢價(jià)
AOSMD
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
A
22+
TO-252
6000
十年配單,只做原裝
詢價(jià)
VB
TO-252
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
A
23+
TO-252
6000
原裝正品,支持實(shí)單
詢價(jià)
A
22+
TO-252
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
更多AOD412L供應(yīng)商 更新時(shí)間2025-2-8 10:20:00