AOK033V120X2

1200?V αSiC Silicon Carbide Power MOSFET

Features ?ProprietaryαSiCMOSFETtechnology ?Lowloss,withlowRDS(ON) ?FastswitchingwithlowRGandlowcapacitance ?Optimizedgatedrivevoltage(VGS=15V) ?Lowreverserecoverydiode(Qrr) Applications Renewable ?EVCharger ?SolarInverters Industrial ?UPS ?SMPS

AOK033V120X2Q

1200 V αSiC Silicon Carbide Power MOSFET

Features ?ProprietaryαSiCMOSFETtechnology ?Lowloss,withlowRDS,ON ?FastswitchingwithlowRGandlowcapacitance ?Optimizedgatedrivevoltage(VGS=15V) ?Lowreverserecoverydiode(Qrr) ?AEC-Q101AutomotiveQualified Applications ?xEVCharger ?ElectricVehicleSupply

AOK040A60

600V, aMOS5TM N-Channel Power Transistor

GeneralDescription ?ProprietaryaMOS5TMtechnology?LowRDS(ON)?OptimizedswitchingparametersforbetterEMIperformance?Enhancedbodydiodeforrobustnessandfastreverserecovery Applications ?PFCandPWMstages(LLC,FSFB,TTF)ofServer,Telecom,Industrial,UPS,andSolarInverters

AOK065A60FD

600V,aMOS5TM N-Channel Power Transistor

GeneralDescription ?ProprietaryaMOS5TMtechnology?LowRDS(ON)?OptimizedswitchingparametersforbetterEMIperformance?Enhancedbodydiodeforrobustnessandfastreverserecovery Applications ?PFCandPWMstages(LLC,FSFB,TTF)ofServer,Telecom,Industrial,UPS,andSolarInverters

AOK065V120X2

1200 V αSiC Silicon Carbide Power MOSFET

Features ?ProprietaryαSiCMOSFETtechnology ?Lowloss,fastswitchingspeedswithlowRG ?Optimizeddrivevoltage(VGS=15V) forbroaddrivercompatibility ?RobustbodydiodeandlowQrr Applications RenewableIndustrial ?EVCharger?UPS ?SolarInverters?SMPS ?MotorDrives

AOK065V65X2

650V αSiC Silicon Carbide Power MOSFET

Features ?ProprietaryαSiCMOSFETtechnology ?Lowloss,fastswitchingspeedswithlowRG ?Optimizeddrivevoltage(VGS=15V) forbroaddrivercompatibility ?RobustbodydiodeandlowQrr Applications ?Renewable?Industrial ?EVCharger?UPS ?SolarInverters

AOK10B60D

600V, 10A Alpha IGBT with Diode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOK150V120X2

1200 V αSiC Silicon Carbide Power MOSFET

Features ?ProprietaryαSiCMOSFETtechnology ?Lowloss,withlowRDS,ON ?FastswitchingwithlowRGandlowcapacitance ?Optimizedgatedrivevoltage(VGS=15V) ?Lowreverserecoverydiode(Qrr) Applications RenewableIndustrial ?EVCharger?UPS ?SolarInverters?SMPS ?Mot

AOK150V120X2Q

1200 V αSiC Silicon Carbide Power MOSFET

Features ?ProprietaryαSiCMOSFETtechnology ?Lowloss,withlowRDS,ON ?FastswitchingwithlowRGandlowcapacitance ?Optimizedgatedrivevoltage(VGS=15V) ?Lowreverserecoverydiode(Qrr) ?AEC-Q101AutomotiveQualified Applications ?xEVCharger ?ElectricVehicleSupply

AOK15B60D

600V, 15A Alpha IGBT with Diode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOK20120XSD

1200 V αSiC Silicon Carbide Schottky Barrier Diode

Features ?ProprietaryαSiCSchottkyBarrierDiodetechnology ?Negligiblereverserecoverycurrent ?Maximumoperatingjunctiontemperatureof175°C ?Improvedswitchinglossesvs.Sibipolardiodes ?Positivetemperaturecoefficientforeaseofparalleling Applications RenewableIndustr

AOK20N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.37Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

AOK20S60

600V 20A a MOS Power Transistor

GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOK20S60

isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-247packaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?PFCstages ?Powersupply ?Switchingapplications

AOK20S60L

isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) ?100avalanchetested ?MinimumLot-to-L

AOK20S60L

600V 20A a MOS

GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOK22N50

500V,22A N-Channel MOSFET

GeneralDescription TheAOK22N50isfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabilitythispartscanbead

AOK2500L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=180A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

AOK27S60

600V 27A a MOS Power Transistor

GeneralDescription TheAOK27S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOK27S60L

isc N-Channel MOSFET Transistor

?DESCRITION ?Besuitableforsynchronousrectificationforserverand generalpurposeapplications ?FEATURES ?DrainCurrent–ID=27A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max) ?100avalanchetested ?Minimum