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AOK27S60L

600V 27A a MOS

GeneralDescription TheAOK27S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOK29S50

isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=29A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max) ?100avalanchetested ?MinimumLot-to-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOK29S50

500V 29A a MOS Power Transistor

GeneralDescription TheAOK29S50hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOK40B120H1

Trench gate Field-Stop IGBT

DESCRIPTION ·1200V,40A ·HighSpeedSwitching ·LowPowerLoss APPLICATIONS ·WeldingMachines ·UPS&SolarInverters ·VeryHighSwitchingFrequencyApplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOK40B120P1

1200V, 40A Alpha IGBT TM With Soft and Fast Recovery Anti-Parallel Diode

GeneralDescription ?1200VlatestAlphaIGBT(αIGBT)technology ?VerylowVCE(sat) ?Highshort-circuitruggedness ?Verylowturn-onEMI ?Easyparallelingcapability ?LowgatechargeQg ?Highefficiencyandruggednessinhardswitchingconverters ?Maximumjunctiontemperature175°C

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOK40B65HQ1

650V, 40A AlphaIGBTTM With soft and fast recovery anti-parallel diode

GeneralDescription ?650Vbreakdownvoltage?Veryhighswitchingspeed?VerylowVfandQrr?Lowturn-offswitchinglossandsoftness?VerygoodEMIbehavior?LatestAlphaIGBTtechnology Applications ?UPS?SolarInverter?Welding

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOK40B65HQ3

650V, 40A AlphaIGBTTM With soft and fast recovery anti-parallel diode

GeneralDescription ?650Vbreakdownvoltage?Highswitchingspeed?LowQrr?Lowturn-offswitchinglossandsoftness?VerygoodEMIbehavior?LatestAlphaIGBTtechnology Applications ?PFCapplicationforair-conditioners?Solarinverter?Weldingmachines

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOK42S60

600V 39A a MOS Power Transistor

GeneralDescription TheAOK42S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythisdevicecanbe

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOK42S60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=39A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=99mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOK42S60L

isc N-Channel MOSFET Transistor

?DESCRITION ?Besuitableforsynchronousrectificationforserverand generalpurposeapplications ?FEATURES ?DrainCurrent–ID=39A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=99mΩ(Max) ?100avalanchetested ?Minimum

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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