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FIR2N80BPG

800VN-ChannelMOSFET-T

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR2N80FG

800VN-ChannelMOSFET-T

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR2N80LG

800VN-ChannelMOSFET-T

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FKPF2N80

ApplicationExplanation(Switchingmodepowersupply,lightdimmer,electricflasherunit,hairdrier)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB2N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD2N80

800VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD2N80

N-ChannelQFETMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD2N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.8A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQD2N80D

iscN-ChannelMOSFETTransistor

·FEATURES ·Drain-sourceon-resistance: RDS(on)≤6.3Ω@10V ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·HighfastswitchingPowerSupply

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQD2N80I

iscN-ChannelMOSFETTransistor

·FEATURES ·Drain-sourceon-resistance: RDS(on)≤6.3Ω@10V ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·HighfastswitchingPowerSupply

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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AOS/萬(wàn)代
23+
TO-220
50000
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AOS
TO-220
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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AOS/萬(wàn)代
23+
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5000
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23+
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20000
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NA/
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AOS
24+
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140
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AOT/榮創(chuàng)
2021+
3014
100500
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AOT
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17454
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24+
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CHINAXYJ
23+
SMD
9868
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更多AOT2N80供應(yīng)商 更新時(shí)間2025-1-20 11:02:00

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