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AQV414E

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414E

Package:6-DIP(0.300",7.62mm);包裝:散裝 類別:繼電器 固態(tài)繼電器 描述:SSR RELAY DPST-NC 120MA 0-400V

Panasonic Electric Works

Panasonic Electric Works

Panasonic Electric Works

AQV414E

Package:6-DIP(0.300",7.62mm);包裝:散裝 類別:繼電器 固態(tài)繼電器 描述:SSR RELAY DPST-NC 120MA 0-400V

Panasonic Electric Works

Panasonic Electric Works

Panasonic Electric Works

AQV414EA

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EAX

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EAZ

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EH

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EHA

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EHAX

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQV414EHAZ

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    AQV414E

  • 制造商:

    Panasonic Electric Works

  • 類別:

    繼電器 > 固態(tài)繼電器

  • 系列:

    PhotoMOS? AQV

  • 包裝:

    散裝

  • 安裝類型:

    通孔

  • 電路:

    DPST-NC(2 Form B)

  • 輸出類型:

    AC,DC

  • 電壓 - 輸入:

    1.25VDC

  • 端接樣式:

    PC 引腳

  • 封裝/外殼:

    6-DIP(0.300",7.62mm)

  • 供應(yīng)商器件封裝:

    6-DIP

  • 描述:

    SSR RELAY DPST-NC 120MA 0-400V

供應(yīng)商型號品牌批號封裝庫存備注價格
NAIS
24+
DIP
6500
詢價
NAIS
06+
DIP6
2000
詢價
NAIS
25+
SOP
3000
強調(diào)現(xiàn)貨,隨時查詢!
詢價
NAIS
10+
DIP-6
7800
全新原裝正品,現(xiàn)貨銷售
詢價
Panasonic
24+
DIP6
5650
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
NAIS
24+
DIP6
3500
原裝現(xiàn)貨,可開13%稅票
詢價
NAIS
2020+
DIP-6
999999
100%進口原裝正品公司現(xiàn)貨庫存
詢價
NAIS
17+
DIP
9888
全新進口原裝,現(xiàn)貨庫存
詢價
NAIS
1998
DIP
53843
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價
NAIS
22+
DIP
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
詢價
更多AQV414E供應(yīng)商 更新時間2025-2-25 16:30:00