零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
LasermarkingforEPCOSfilmcapacitorsfromNashikandZhuhai | TDKTDK Corporation TDK株式會(huì)社東電化(中國)投資有限公司 | TDK | ||
MKTCapacitors MKTCapacitors metalizedpolyesterfilmcapacitorsinaccordancewithDIN44112VR=63to630Vdc | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
DUAL-CHANNELFRONT-ENDDOCSIS2.0STBICWITHCHANNELBONDING | BOARDCOMBroadcom Corporation. 博通公司博通半導(dǎo)體 | BOARDCOM | ||
DUAL-CHANNELFRONT-ENDDOCSIS2.0STBICWITHCHANNELBONDING | BOARDCOMBroadcom Corporation. 博通公司博通半導(dǎo)體 | BOARDCOM | ||
QuadGatedNon-InvertingPowerDriver Description TheCA3252isusedtointerfacelow-levellogictohighcurrentloads.EachPowerDriverhasfourinvertingswitchesconsistingofaninvertinglogicinputstageandaninvertinglow-sidedriveroutputstage.Allinputsare5VTTL/CMOSlogiccompatibleandhaveacommonEnableinput | Intersil Intersil Corporation | Intersil | ||
QuadGatedNon-InvertingPowerDriver Description TheCA3252isusedtointerfacelow-levellogictohighcurrentloads.EachPowerDriverhasfourinvertingswitchesconsistingofaninvertinglogicinputstageandaninvertinglow-sidedriveroutputstage.Allinputsare5VTTL/CMOSlogiccompatibleandhaveacommonEnableinput | Intersil Intersil Corporation | Intersil | ||
QuadGatedNon-InvertingPowerDriver Description TheCA3252isusedtointerfacelow-levellogictohighcurrentloads.EachPowerDriverhasfourinvertingswitchesconsistingofaninvertinglogicinputstageandaninvertinglow-sidedriveroutputstage.Allinputsare5VTTL/CMOSlogiccompatibleandhaveacommonEnableinput | Intersil Intersil Corporation | Intersil | ||
N-Channel60-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,5A,RDS(ON)=32m?@VGS=10V. RDS(ON)=45m?@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,25A,RDS(ON)=28m?@VGS=10V. RDS(ON)=39m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,7.5A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-Channel20V(D-S)MOSFET FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronousRectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,7.5A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,8A,RDS(ON)=29mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=55mW@VGS=2.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,8A,RDS(ON)=29mΩ@VGS=10V. RDS(ON)=36mΩ@VGS=4.5V. RDS(ON)=55mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■Surfacemount | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,8A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=45mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,25A,RDS(ON)=28m?@VGS=10V. RDS(ON)=39m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT7.5Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT25Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOchenmko 力勤股份有限公司 | CHENMKO |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ACER |
24+ |
DIP40 |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) | ||
CHIPOWN |
2015+ |
TDFN32 |
16898 |
代理CHIPOWN原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
CHIPOWN |
21+ |
DFN |
302000 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
CHIPOWN |
22+ |
DFN |
25000 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十 |
詢價(jià) | ||
CHIPOWN |
14+ |
DFN |
102000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
CHIPOWN |
2023+ |
8700 |
原裝現(xiàn)貨 |
詢價(jià) | |||
CHIPOWN |
23+ |
DFN |
302000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
CHIPOWN |
24+ |
DFN |
56000 |
公司進(jìn)口原裝現(xiàn)貨 批量特價(jià)支持 |
詢價(jià) | ||
CHIPOWN |
23+ |
原裝正品現(xiàn)貨 |
10000 |
DFN |
詢價(jià) | ||
N/A |
23+ |
SMD |
5000 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋齑?詳 |
詢價(jià) |
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