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CEA3252

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,5A,RDS(ON)=32m?@VGS=10V. RDS(ON)=45m?@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEA3252

N-Channel 6 0-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CED3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,25A,RDS(ON)=28m?@VGS=10V. RDS(ON)=39m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3252

N-Channel20V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronousRectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CEM3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,7.5A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,7.5A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3252L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,8A,RDS(ON)=29mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=55mW@VGS=2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3252L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,8A,RDS(ON)=29mΩ@VGS=10V. RDS(ON)=36mΩ@VGS=4.5V. RDS(ON)=55mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■Surfacemount

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,8A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=45mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3252

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET/華瑞
18+
SOT-89
300000
原裝正品 可含稅交易
 詢價(jià)
CET/華瑞
23+
SOT-8
9800
只做原裝假一賠十
 詢價(jià)
CET/華瑞
24+
SOT89
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
 詢價(jià)
CET/華瑞
24+
SOT-89
499546
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
SR
23+
SOT89
6000
原裝正品,假一罰十
 詢價(jià)
CET
24+
50000
詢價(jià)
CET
19+
SOT-89
67709
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
VB
23+
SOT89
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
CET
22+
SOT89-3L
20587
原裝正品現(xiàn)貨
 詢價(jià)
CET
20+
SOT-89
43000
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
更多CEA3252供應(yīng)商 更新時(shí)間2025-2-8 14:00:00

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