零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
CEB02N65A | N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,1.2A,RDS(ON)=10.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,2.0A,RDS(ON)=5.0W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126Fpackage. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,0.35A,RDS(ON)=10.5W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
CET/華瑞 |
23+ |
TO-263 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
CET |
23+ |
TO-263 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
CET/華瑞 |
2022+ |
TO-263 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
CET |
24+ |
TO-263 |
12300 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
CET/華瑞 |
23+ |
TO-263 |
360000 |
交期準(zhǔn)時(shí)服務(wù)周到 |
詢價(jià) | ||
CET |
24+ |
50000 |
詢價(jià) | ||||
CET |
24+ |
TO-263 |
90000 |
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理 |
詢價(jià) | ||
CET |
24+ |
TO-263 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
CET |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- CEB02N65D
- CEB02N6A
- CEB02N6G
- CEB02N7
- CEB02N7G
- CEB03N100
- CEB04N100
- CEB04N6
- CEB04N65A
- CEB04N7G
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- CEB06N7
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- CEB100N10L
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- CEB1012L
- CEB10N4
- CEB10N6
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- CEB12P10
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- CEB13N10
- CEB13N10
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- CEB13N5A
- CEB13N65S
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- CEB14G04
- CEB14P20
相關(guān)庫(kù)存
更多- CEB02N65G
- CEB02N6A
- CEB02N6G
- CEB02N7G
- CEB02N9
- CEB03N8
- CEB04N6
- CEB04N65
- CEB04N7
- CEB04N7G
- CEB05N65
- CEB06N5
- CEB07N65
- CEB07N65LN
- CEB07N7
- CEB07N8
- CEB08N8
- CEB09N7A
- CEB09N7G
- CEB1012
- CEB1012L
- CEB10N4
- CEB10N6
- CEB10N65
- CEB110P03
- CEB1175
- CEB1186
- CEB1188SA
- CEB1195
- CEB11N65S
- CEB12N5
- CEB12N6
- CEB12N65A
- CEB12P10
- CEB1310S
- CEB13N07
- CEB13N10
- CEB13N10L
- CEB13N5
- CEB13N5B
- CEB140N10
- CE-B1476
- CEB14A04
- CEB14N5
- CEB14P20A