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CEB100N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP100N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FDP100N10

N-ChannelPowerTrench?MOSFET

Description ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?RDS(on)=8.2mΩ(Typ.)@VGS=10V,ID=75A ?Fastswitch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP100N10

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220packaging ?Lowswitchingloss ?Ultralowgatecharge ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?Switchingapplications ?AC-DCconverters ?LEDlighting ?Unin

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FIR100N10PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR100N10RG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FTD100N10A

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IXFK100N10

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon

IXYS

IXYS Corporation

IXFK100N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN100N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

LMPC100N10

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

MTY100N10E

TMOSPOWERFET100AMPERES100VOLTSRDS(on)=0.011OHM

TMOSE-FET?PowerFieldEffecttransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforh

Motorola

Motorola, Inc

MTY100N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTY100N10E

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDBA100N10B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDBA100N10B

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDPL100N10B

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDPL100N10B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDPL100N10BG

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTY100N10

PowerMOSFET123A,100VN-ChannelEnhancement-ModeTO264Package

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價格
DVBILIER
23+
NA
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
CET
24+
TO-263
215
詢價
CET
SOT-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
CET
24+
TO-263
90000
進(jìn)口原裝現(xiàn)貨假一罰十價格合理
 詢價
CET
2023+
SOT-263
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
CET
2020+
TO-263
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
CET/華瑞
22+
SOT-263
20000
保證原裝正品,假一陪十
 詢價
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價
C
23+
TO263
10000
公司只做原裝正品
 詢價
CET/華瑞
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多CEB100N10L供應(yīng)商 更新時間2024-11-16 17:00:00

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